RGT20TM65DGC9 ROHM

RGT20TM65DGC9 electronic component of ROHM
RGT20TM65DGC9 ROHM
RGT20TM65DGC9 IGBT Transistors
RGT20TM65DGC9  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of RGT20TM65DGC9 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. RGT20TM65DGC9 IGBT Transistors are a product manufactured by ROHM. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

Part No. RGT20TM65DGC9
Manufacturer: ROHM
Category: IGBT Transistors
Description: IGBT Transistors 650V 10A IGBT Field Stop Trench
Datasheet: RGT20TM65DGC9 Datasheet (PDF)
Price (USD)
1: USD 2.625 ea
Line Total: USD 2.62 
Availability : 900
  
Ship by Wed. 12 Nov to Fri. 14 Nov
QtyUnit Price
1$ 2.625
10$ 1.92
100$ 1.584
500$ 1.353

Availability 900
Ship by Wed. 12 Nov to Fri. 14 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 2.625
10$ 1.92
100$ 1.584
500$ 1.353

   
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We are delighted to provide the RGT20TM65DGC9 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RGT20TM65DGC9 and other electronic components in the IGBT Transistors category and beyond.

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RGT20TM65D Datasheet 650V 10A Field Stop Trench IGBT lOutline TO-220NFM V 650V CES I 6A C (100C) V 1.65V CE(sat) (Typ.) P 25W D (1) (2)(3) lInner Circuit lFeatures (2) 1) Low Collector - Emitter Saturation Voltage (1) Gate (2) Collector 2) Low Switching Loss *1 (3) Emitter (1) 3) Short Circuit Withstand Time 5s *1 Built in FRD 4) Built in Very Fast & Soft Recovery FRD (3) (RFN - Series) lPackaging Specifications 5) Pb - free Lead Plating RoHS Compliant Packaging Tube lApplication Reel Size (mm) - General Inverter Tape Width (mm) - UPS Type Basic Ordering Unit (pcs) 1,000 Power Conditioner Packing Code C9 Welder Marking RGT20TM65D lAbsolute Maximum Ratings (at T = 25C unless otherwise specified) C Parameter Symbol Value Unit V Collector - Emitter Voltage 650 V CES V Gate - Emitter Voltage 30 V GES T = 25C I 10 A C C Collector Current T = 100C I 6 A C C *1 Pulsed Collector Current I 30 A CP T = 25C I 13 A C F Diode Forward Current T = 100C I 7 A C F *1 Diode Pulsed Forward Current I 30 A FP T = 25C P 25 W C D Power Dissipation T = 100C P 12 W C D Operating Junction Temperature T -40 to +175 C j T Storage Temperature -55 to +175 C stg *1 Pulse width limited by T jmax. www.rohm.com 2019.06 - Rev.B 2019 ROHM Co., Ltd. All rights reserved. 1/11Datasheet RGT20TM65D lThermal Resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal Resistance IGBT Junction - Case - - 5.84 C/W (j-c) Thermal Resistance Diode Junction - Case R - - 6.70 C/W (j-c) lIGBT Electrical Characteristics (at T = 25C unless otherwise specified) j Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector - Emitter Breakdown BV I = 10A, V = 0V 650 - - V CES C GE Voltage Collector Cut - off Current I V = 650V, V = 0V - - 10 A CES CE GE Gate - Emitter Leakage I V = 30V, V = 0V - - 200 nA GES GE CE Current Gate - Emitter Threshold V V = 5V, I = 6.7mA 5.0 6.0 7.0 V GE(th) CE C Voltage I = 10A, V = 15V, C GE Collector - Emitter Saturation V T = 25C - 1.65 2.1 V CE(sat) j Voltage T = 175C - 2.15 - j www.rohm.com 2019.06 - Rev.B 2019 ROHM Co., Ltd. All rights reserved. 2/11

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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