About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
RGS50TSX2DHRC11


IGBT Transistors 1200V 25A Field Stop Trench IGBT. RGS50TSX2DHR is a highly reliable IGBT for the general inverter for automotive and industrial.
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ROHM Availability : 436
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USD 9.3353

Multiples of: 1

         Tube      
IXBK75N170


IGBT Transistors BIMOSFETS 1700V 200A
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IXYS Availability : 436
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USD 51.876

Multiples of: 1

        TO - 264 - 3TubeSiThrough Hole - 55 C+ 150 CIxbk75n170
IGP30N60H3XKSA1


IGBT Transistors INDUSTRY 14
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Infineon Availability : 436
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USD 1.3147

Multiples of: 1

                
RGTH50TK65GC11


IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
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ROHM Availability : 434
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USD 3.132

Multiples of: 1

Single650 V1.6 V30 V26 A200 nA  TO - 3PFMTubeSiThrough Hole59 W- 40 C+ 175 C 
RGW50TK65DGVC11


IGBT Transistors High-Speed Fast Switching Type, 650V 18A, TO-3PFM, Field Stop Trench IGBT
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ROHM Availability : 434
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USD 3.2804

Multiples of: 1

Single650 V1.9 V30 V30 A   TO - 3PFM - 3TubeSiThrough Hole67 W- 40 C+ 175 C 
IXGH28N60B3D1


IGBT Transistors 28 Amps 600V
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IXYS Availability : 434
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USD 3.465

Multiples of: 1

Single600 V1.5 V 66 A+/- 100 nA  TO - 247AD - 3TubeSiThrough Hole190 W- 55 C+ 150 CIxgh28n60
RGTH50TK65DGC11


IGBT Trench Field Stop 650 V 26 A 59 W Through Hole TO-3PFM
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ROHM Availability : 434
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USD 3.492

Multiples of: 1

Single650 V1.6 V30 V26 A200 nA  TO - 3PFMTubeSiThrough Hole59 W- 40 C+ 175 C 
RGTH80TK65DGC11


IGBT Trench Field Stop 650 V 31 A 66 W Through Hole TO-3PFM
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ROHM Availability : 434
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USD 3.78

Multiples of: 1

Single650 V1.6 V30 V31 A200 nA  TO - 3PFMTubeSiThrough Hole66 W- 40 C+ 175 C 
RGTH00TS65GC11


ROHM Semiconductor IGBT Transistors
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ROHM Availability : 433
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USD 2.5587

Multiples of: 1

 650 V1.6 V+/- 30 V85 A+/- 200 nA  TO - 247 - 3TubeSiThrough Hole277 W- 40 C+ 175 CRgth00ts65
RGTH60TK65DGC11


IGBT Trench Field Stop 650 V 28 A 61 W Through Hole TO-3PFM
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ROHM Availability : 433
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USD 3.684

Multiples of: 1

Single650 V1.6 V30 V28 A200 nA  TO - 3PFMTubeSiThrough Hole61 W- 40 C+ 175 C 
RGS00TS65HRC11


IGBT Transistors 650V 50A FIELD STOP TRENCH IGB
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ROHM Availability : 431
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USD 3.9903

Multiples of: 1

Single650 V1.65 V30 V88 A200 nA Aec - Q101TO - 247N - 3TubeSiThrough Hole326 W- 40 C+ 175 C 
RGW50TS65DGC11


IGBT Transistors 650V 25A Field Stop Trench IGBT
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ROHM Availability : 430
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USD 2.8867

Multiples of: 1

Single650 V1.9 V30 V50 A   TO - 247N - 3TubeSiThrough Hole156 W- 40 C+ 175 C 
STGFW20V60F


STMicroelectronics IGBT Transistors 600V 20A Hi Spd TrenchGate FieldStop
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STMicroelectronics Availability : 429
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USD 1.375

Multiples of: 1

Single600 V2.3 V20 V40 A250 nA  TO - 3PF - 3TubeSiThrough Hole52 W- 55 C+ 175 C600 - 650V Igbts
STGW40V60F


IGBT Transistors 600V 40A Trench Gate 1.8V Vce IGBT
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STMicroelectronics Availability : 429
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USD 2.376

Multiples of: 1

Single600 V2.35 V+/- 20 V80 A 283 W TO - 247 - 3TubeSiThrough Hole283 W- 55 C+ 175 CStgw40v60f
IXGH48N60A3


IGBT Transistors 75 Amps 600V 1.05 V Rds
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IXYS Availability : 428
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USD 3.96

Multiples of: 1

Single600 V1.18 V20 V120 A100 nA  TO - 247AD - 3TubeSiThrough Hole300 W- 55 C+ 150 CIxgh48n60
RGTH40TK65GC11


IGBT Trench Field Stop 650 V 23 A 56 W Through Hole TO-3PFM
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ROHM Availability : 426
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USD 2.5413

Multiples of: 1

Single650 V1.6 V30 V23 A200 nA  TO - 3PFMTubeSiThrough Hole56 W- 40 C+ 175 C 
RGW50TK65GVC11


IGBT Transistors High-Speed Fast Switching Type, 650V 18A, TO-3PFM, Field Stop Trench IGBT
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM Availability : 426
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USD 2.9225

Multiples of: 1

Single650 V1.9 V30 V30 A   TO - 3PFM - 3TubeSiThrough Hole67 W- 40 C+ 175 C 
NGTB75N65FL2WG


ON Semiconductor IGBT Transistors
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ON Semiconductor Availability : 424
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USD 6.739

Multiples of: 1

         TubeSi    Ngtb75n65fl2
IKA06N60T


Infineon Technologies IGBT Transistors LOW LOSS DuoPack 600V 6.2A
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Infineon Availability : 422
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USD 0.9631

Multiples of: 1

Single600 V1.5 V+/- 20 V10 A100 nA  TO - 220 - 3 FPTubeSiThrough Hole28 W- 40 C+ 150 CIka06n60
IXYH10N170CV1


IGBT Transistors 1700V/10A XPT IGBT w/ Diode
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IXYS Availability : 420
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USD 6.138

Multiples of: 1

Single1700 V4.1 V20 V36 A100 nA  TO - 247AD - 3TubeSiThrough Hole280 W- 55 C+ 175 C 
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