About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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Image  Information Image Stock Code(▲▼)Description
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Global Stock ⓘ (▲▼)Price(USD

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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
AOK40B65H2AL


Transistor: IGBT; 650V; 40A; 105W; TO247; Eoff: 0.54mJ; Eon: 1.17mJ
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Alpha & Omega Availability : 185
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USD 1.876

Multiples of: 1

  2.05 V   105 W         
IXYA20N120C4HV


IGBT Transistors IGBT 4TH GENERATION GENX4
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IXYS Availability : 169
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USD 7.6327

Multiples of: 1

         Tube      
IKP20N60TXKSA1


Transistor: IGBT; 600V; 20A; 166W; TO220-3
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Infineon Availability : 169
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USD 1.0235

Multiples of: 1

                
NGTB60N60SWG


ON Semiconductor IGBT Transistors 600V60A IGBT LPT TO-247
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor Availability : 167
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USD 3.432

Multiples of: 1

Single600 V2.6 V20 V120 A200 nA  TO - 247 - 3Tube Through Hole298 W- 55 C+ 150 C 
IKW25N120H3


IGBT Transistors IGBT PRODUCTS
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Infineon Availability : 166
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USD 2.2915

Multiples of: 1

Single1200 V2.05 V+/- 20 V50 A600 nA326 W TO - 247 - 3TubeSiThrough Hole326 W- 40 C+ 175 CIkw25n120
IKWH40N65WR6


TO-247-3 IGBTs ROHS
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Infineon Availability : 166
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USD 2.7835

Multiples of: 1

                
IKP20N60H3


IGBT Transistors 600V HI SPEED SW IGBT
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Infineon Availability : 164
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USD 0.8558

Multiples of: 1

Single600 V1.95 V20 V20 A100 nA170 W TO - 220 - 3 FPTubeSiThrough Hole170 W- 40 C+ 175 CIkp20n60
IHW30N135R5XKSA1


IGBT Transistors TRENCHSTOP RC-H5 1200V IGBT
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Infineon Availability : 163
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USD 1.9066

Multiples of: 1

Single1350 V1.65 V20 V60 A100 uA  TO - 247 - 3TubeSiThrough Hole330 W- 40 C+ 175 CRc - H5
IXGH20N120A3


IGBT Transistors G-SERIES A3/B3/C3 GENX3 IGBT 1200V 20A
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IXYS Availability : 163
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USD 4.191

Multiples of: 1

Single1.2 kV2.3 V+/- 20 V40 A100 nA  TO - 247AD - 3TubeSiThrough Hole180 W- 55 C+ 150 CIxgh20n120
IXXK100N60C3H1


IGBT Transistors XPT IGBT C3-Class 600V/170Amp CoPacked
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IXYS Availability : 163
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USD 15.818

Multiples of: 1

 600 V2.2 V20 V170 A100 nA  TO - 264TubeSiThrough Hole695 W- 55 C+ 150 CIxxk100n60
IXXR110N65B4H1


IGBT Transistors 650V/150A TRENCH IGBT GENX4 XPT
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IXYS Availability : 163
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USD 18.117

Multiples of: 1

Single650 V1.75 V20 V150 A100 nA  ISOPLUS 247 - 3TubeSiThrough Hole455 W- 55 C+ 175 CIxxr110n65
RGT40NL65DGTL


IGBT Transistors FIELD STOP TRENCH IGBT
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ROHM Availability : 162
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USD 1.6445

Multiples of: 1

Single650 V1.65 V30 V40 A200 nA  TO - 263L - 3Cut TapeSiSmd/Smt161 W- 40 C+ 175 C 
IXXH30N60B3


IGBT Transistors IGBT XPT-GENX3
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IXYS Availability : 162
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USD 2.805

Multiples of: 1

         TubeSi     
IXGH16N170


IGBT Transistors 32 Amps 1700 V 3.5 V Rds
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IXYS Availability : 162
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USD 8.2521

Multiples of: 1

Single1.7 kV2.7 V+/- 20 V32 A100 nA  TO - 247AD - 3TubeSiThrough Hole190 W- 55 C+ 150 CIxgh16n170
STGFW20V60DF


IGBT Transistors Trench gate field-stop IGBT, V series 600 V, 20 A very high speed
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STMicroelectronics Availability : 161
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USD 1.331

Multiples of: 1

Single600 V1.8 V+/- 20 V40 A250 nA  TO - 3PFTubeSiThrough Hole52 W- 55 C+ 175 C600 - 650V Igbts
NGTB50N65FL2WG


IGBTs Trench Field Stop 650V 100A TO-247 RoHS
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ON Semiconductor Availability : 159
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USD 4.257

Multiples of: 1

                
IXYX110N120B4


IGBT Transistors XPT thin-wafer technology, 4th generation (Gen 4) Trench IGBT. Disc IGBT Gen 4 XPT PLUS247
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IXYS Availability : 156
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USD 14.3076

Multiples of: 1

Single1200 V - 30 V , + 30 V340 A    TubeSiThrough Hole1360 W- 55 C+ 175 C1200V XPTTM Gen 4
IGW40N60TPXKSA1


Transistor: IGBT; 600V; 48A; 123W; TO247-3
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Infineon Availability : 154
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USD 0.9438

Multiples of: 1

      123 W   Trenchstop     
SGW20N60HS


IGBT Transistors HIGH SPEED NPT TECH 600V 20A
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Infineon Availability : 153
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USD 2.42

Multiples of: 1

Single600 V +/- 20 V    TO - 247 - 3TubeSiThrough Hole - 55 C+ 150 CSgw20n60
IGW50N60TPXKSA1


Transistor: IGBT; 600V; 61A; 319.2W; TO247-3
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Infineon Availability : 151
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USD 1.2576

Multiples of: 1

      319.2 W   Trenchstop     
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