DMN62D1LFDQ-7 Diodes Incorporated

DMN62D1LFDQ-7 electronic component of Diodes Incorporated
DMN62D1LFDQ-7 Diodes Incorporated
DMN62D1LFDQ-7 MOSFETs
DMN62D1LFDQ-7  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of DMN62D1LFDQ-7 MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMN62D1LFDQ-7 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. DMN62D1LFDQ-7
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: MOSFET 2N7002 Family
Datasheet: DMN62D1LFDQ-7 Datasheet (PDF)
Price (USD)
1: USD 0.5375 ea
Line Total: USD 0.54 
Availability - 30567
  
Ship by Tue. 29 Jul to Thu. 31 Jul
QtyUnit Price
1$ 0.5375
10$ 0.3413
100$ 0.1704
500$ 0.1507
1000$ 0.1386
3000$ 0.1188
6000$ 0.1089
9000$ 0.0957
24000$ 0.0891

Availability 30567
Ship by Tue. 29 Jul to Thu. 31 Jul
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.5375
10$ 0.3413
100$ 0.1704
500$ 0.1507
1000$ 0.1386
3000$ 0.1188
6000$ 0.1089
9000$ 0.0957
24000$ 0.0891

   
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We are delighted to provide the DMN62D1LFDQ-7 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMN62D1LFDQ-7 and other electronic components in the MOSFETs category and beyond.

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DMN62D1LFDQ N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I D BV R DSS DS(ON) Low Input Capacitance T = +25C A Fast Switching Speed 2 V = 4V 400mA GS 60V Low Input/Output Leakage 2.5 V = 2.5V 350mA GS ESD Protected Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Description and Applications Mechanical Data Case: U-DFN1212-3 (Type C) This MOSFET is designed to meet the stringent requirements of Case Material: Molded Plastic. UL Flammability Classification automotive applications. It is qualified to AEC-Q101, supported by a Rating 94V-0 PPAP, and is ideal for use in: Moisture Sensitivity: Level 1 per J-STD-020 Terminals: NiPdAu over Copper Leadframe. Solderable per MIL- Backlighting STD-202, Method 208 e4 Power Management Functions Terminal Connections: See Diagram DC-DC Converters Weight: 0.005 grams (Approximate) D G pin S G D G Gate Protection S Diode ESD PROTECTED Top View Bottom View Equivalent Circuit Pin-Out Top View Ordering Information (Note 5) Part Number Compliance Case Packaging DMN62D1LFDQ-7 Standard U-DFN1212-3 (Type C) 3000/Tape & Reel DMN62D1LFDQ-13 Standard U-DFN1212-3 (Type C) 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DMN62D1LFDQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 60 V DSS Gate-Source Voltage V 20 V GSS T = +25C A 400 Continuous Drain Current (Note 6) V = 4V I mA GS D 310 T = +70C A Pulsed Drain Current (Note 7) 1 A I DM Thermal Characteristics Characteristic Symbol Max Unit Power Dissipation (Note 6) 0.5 W PD 237 C/W Thermal Resistance, Junction to Ambient T = +25C (Note 6) R A JA Operating and Storage Temperature Range -55 to +150 C T , T J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV 60 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current T = +25C I 1 A V = 60V, V = 0V J DSS DS GS 100 nA V = 5V, V = 0V GS DS Gate-Source Leakage I 500 nA V = 10V, V = 0V GSS GS DS 2 A V = 15V, V = 0V GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V 0.6 1 V V = V , I = 250A GS(TH) DS GS D 0.8 2 VGS = 4V, ID = 100mA 1 2.5 V = 2.5V, I = 50mA GS D Static Drain-Source On-Resistance R DS(ON) 1.4 3 V = 1.8V, I = 50mA GS D 1.8 V = 1.5V, I = 10mA GS D Forward Transfer Admittance 1.8 S Y V = 10V, I = 200mA fs DS D Diode Forward Voltage V 0.8 1.3 V V = 0V, I = 115mA SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance C 36 iss V = 25V, V = 0V, DS GS Output Capacitance C 4.6 pF oss f = 1MHz Reverse Transfer Capacitance C 3.6 rss Gate Resistance R 59.8 V = 0V, V = 0V, f = 1MHz g DS GS Total Gate Charge Q 0.55 g V = 4.5V, V = 10V, GS DS Gate-Source Charge 0.08 nC Q gs I = 250mA D Gate-Drain Charge 0.12 Q gd Turn-On Delay Time 2.1 ns t D(ON) V = 10V, V = 30V, GS DS Turn-On Rise Time 2.8 ns t R R = 150, R = 25, L G Turn-Off Delay Time t 21 ns D(OFF) I = 200mA D Turn-Off Fall Time t 13.9 ns F Notes: 6. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. 7. Repetitive rating, pulse width limited by junction temperature. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to production testing. 2 of 7 June 2018 DMN62D1LFDQ www.diodes.com Diodes Incorporated Document number: DS41130 Rev. 1 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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