X-On Electronics has gained recognition as a prominent supplier of DMN1008UFDF-7 MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMN1008UFDF-7 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

DMN1008UFDF-7 Diodes Incorporated

Name: DMN1008UFDF-7
Brand: Diodes Incorporated
SKU: DMN1008UFDF7_Diodes_Incorporated
Availability: InStock
Rating: 5 (11 reviews)

DMN1008UFDF-7 electronic component of Diodes Incorporated

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Part No.	DMN1008UFDF-7
Manufacturer:	Diodes Incorporated
Category:	MOSFETs
Description:	MOSFET MOSFET BVDSS: 8V-24V
Datasheet:	DMN1008UFDF-7 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

5: USD 0.3294 ea
Line Total: USD 1.65

Availability - 24
Ship by Mon. 26 May to Thu. 29 May

MOQ: 5 Multiples: 5
Pack Size: 5

DMN1008UFDF-7 More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

5

Ship by Mon. 26 May to Thu. 29 May

MOQ : 1
Multiples : 1

1 : USD 1.0364
10 : USD 0.8282
30 : USD 0.5433
100 : USD 0.4363
500 : USD 0.3942
1000 : USD 0.3731

24

Ship by Mon. 26 May to Thu. 29 May

MOQ : 5
Multiples : 5

5 : USD 0.3294
50 : USD 0.3226
150 : USD 0.2149
500 : USD 0.2118

Specifications

Manufacturer

Diodes Incorporated Diodes Incorporated

Product Category

MOSFETs MOSFETs

Id - Continuous Drain Current

12.2 A 12.2 A

Vds - Drain-Source Breakdown Voltage

12 V 12 V

Rds On - Drain-Source Resistance

6.6 mOhms 6.6 mOhms

Transistor Polarity

N - Channel N - Channel

Vgs th - Gate-Source Threshold Voltage

300 mV 300 mV

Minimum Operating Temperature

- 55 C - 55 C

Maximum Operating Temperature

+ 150 C + 150 C

Pd - Power Dissipation

1.7 W 1.7 W

Mounting Style

Smd/Smt Smd/Smt

Package / Case

U - DFN2020 - 6 U - DFN2020 - 6

Technology

Si Si

Number of Channels

1 Channel 1 Channel

Vgs - Gate-Source Voltage

4.5 V 4.5 V

Qg - Gate Charge

13.6 nC 13.6 nC

Channel Mode

Enhancement Enhancement

Configuration

Single Single

Brand

Diodes Incorporated Diodes Incorporated

Fall Time

7.5 ns 7.5 ns

Product Type

Mosfet Mosfet

Rise Time

6.6 ns 6.6 ns

Factory Pack Quantity :

3000 3000

Subcategory

Mosfets Mosfets

Typical Turn-Off Delay Time

17.5 ns 17.5 ns

Typical Turn-On Delay Time

3.5 ns 3.5 ns

Notes:- Show Stocked Products With Similar Attributes.

DMN1008UFDF-7 Alternative Parts

We are delighted to provide the DMN1008UFDF-7 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMN1008UFDF-7 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

DMN1008UFDF 12V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features I Max 0.6mm Profile Ideal for Low Profile Applications D BV R Max DSS DS(ON) 2 T = +25C A PCB Footprint of 4mm Low Gate Threshold Voltage 8m V = 4.5V 12.2A GS 12V Fast Switching Speed 12.5m V = 2.5V 10.4A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. Description A listing can be found at This MOSFET is designed to minimize the on-state resistance DMN1008UFDF Marking Information Site 1 8N = Product Type Marking Code YM = Date Code Marking 8N Y = Year (ex: H = 2020) M = Month (ex: 9 = September) Date Code Key Year 2015 2020 2021 2022 2023 2024 2025 2026 2027 2028 2029 Code C H I J K L M N O P R Aug Sep Oct Nov Dec Month Jan Feb Mar Apr May Jun Jul 8 9 O N D Code 1 2 3 4 5 6 7 Site 2 8N = Product Type Marking Code YWX = Date Code Marking 8N Y = Year (ex: 0 = 2020) W = Week (ex: a = Week 27 z Represents Week 52 and 53) X = Internal Code (ex: U = Monday) Date Code Key Year 2015 2020 2021 2022 2023 2024 2025 2026 2027 2028 2029 Code 5 0 1 2 3 4 5 6 7 8 9 Week 1-26 27-52 53 Code A-Z a-z z Internal Code Sun Mon Tue Wed Thu Fri Sat Code T U V W X Y Z 2 of 8 February 2020 DMN1008UFDF www.diodes.com Diodes Incorporated Datasheet number: DS38322 Rev. 4 - 2 ADVANCED INFORMATION YM YWX

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
5 Ship by Mon. 26 May to Thu. 29 May MOQ : 1 Multiples : 1	1 : USD 1.0364 10 : USD 0.8282 30 : USD 0.5433 100 : USD 0.4363 500 : USD 0.3942 1000 : USD 0.3731

24 Ship by Mon. 26 May to Thu. 29 May MOQ : 5 Multiples : 5	5 : USD 0.3294 50 : USD 0.3226 150 : USD 0.2149 500 : USD 0.2118

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