About MOSFET

Diodes Incorporated MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFET

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Id - Continuous Drain Current
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Vds - Drain-source Breakdown Voltage
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Rds On - Drain-source Resistance
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Transistor Polarity
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Vgs - Gate-source Breakdown Voltage
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Vgs Th - Gate-source Threshold Voltage
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Minimum Operating Temperature
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Maximum Operating Temperature
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Pd - Power Dissipation
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Number Of Channels
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Vgs - Gate-source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMN67D8L-7


60V 210mA 340mW 5O@10V,500mA N Channel SOT-23 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated 692580
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USD 0.0214
Multiples of: 3000

210 mA60 V1.5 OhmsN - Channel 1 V- 55 C+ 150 C340 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel+/- 30 V821 pCEnhancement  
DMP56D0UV-7


MOSFET P-Ch ENH -50V 6Ohm FET -4V Vgs -200mA
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Diodes Incorporated 442320
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USD 0.0919
Multiples of: 3000

- 160 mA- 50 V6 OhmsP - Channel8 V- 1.2 V- 55 C+ 150 C400 mWSmd/SmtSOT - 563 - 6Reel   0.58 nCEnhancement  
Hot DMG6402LVT-7


MOSFET 30V N-Ch 30mOhm 10V VGS 30V 6A
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Diodes Incorporated 416130
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USD 0.0626
Multiples of: 3000

6 A30 V30 mOhmsN - Channel 1.5 V- 55 C+ 150 C1.75 WSmd/SmtTSOT - 26 - 6Cut TapeSi1 Channel20 V11.4 nCEnhancement  
DMG1029SVQ-7


MOSFET MOSFET BVDSS: 41V~60V SOT563 T&R 3K
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Diodes Incorporated 416130
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USD 0.1214
Multiples of: 3000

500 mA , - 360 mA60 v , - 60 V1.7 Ohms , 4 OhmsN - Channel, P - Channel 1 v , - 3 V- 55 C+ 150 C1 WSmd/SmtSOT - 563 - 6Cut TapeSi2 Channel20 V0.3 nC , 0.28 nCEnhancement  
DMC3071LVT-7


MOSFET MOSFET BVDSS: 25V-30V
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Diodes Incorporated 415758
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USD 0.0954
Multiples of: 1

4.6 A , 3.3 A30 V50 mOhms , 95 mOhmsN - Channel, P - Channel 1 v , 2.5 V- 55 C+ 150 C1.1 WSmd/SmtTSOT - 26 - 6Cut TapeSi2 Channel20 V4.5 nC , 6.5 nCEnhancement  
DMP2104LP-7


20V 1.5A 500mW 150mO@4.5V,900mA P Channel X1-DFN1411-3 MOSFETs ROHS
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Diodes Incorporated 407868
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USD 0.107
Multiples of: 1

1.5 A20 V150 mOhmsP - Channel 450 mV- 55 C+ 150 C500 mWSmd/SmtDFN1411 - 3Cut TapeSi1 Channel4.5 V Enhancement  
DMN3023L-7


MOSFET N-Ch Enh Mode FET 30Vdss 20Vgss 51A
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Diodes Incorporated 387030
Ships to you
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USD 0.0755
Multiples of: 3000

6.2 A30 V25 mOhmsN - Channel 800 mV- 55 C+ 150 C1.3 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V18.4 nCEnhancement  
DMN53D0LDW-7


MOSFET N-Ch 50Vds 20Vgs FET Enh Mode 46pF 1.5Vgs
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Diodes Incorporated 373632
Ships to you
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USD 0.0425
Multiples of: 1

360 mA50 V1.6 OhmsN - Channel 800 mV- 55 C+ 150 C310 mWSmd/SmtSOT - 363 - 6Cut TapeSi2 Channel10 V0.6 nC , 0.6 nCEnhancement  
BSS138K-13


Trans MOSFET N-CH 50V 0.31A 3-Pin SOT-23 T/R
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Diodes Incorporated 9700
Ships to you
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USD 0.0349
Multiples of: 10000

310 mA50 V3.5 OhmsN - Channel 500 mV- 55 C+ 150 C0.54 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel20 V0.95 nCEnhancement  
DMN62D0U-7


MOSFET N-Ch Enh Mode FET 60V 20Vgss 1.2A
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Diodes Incorporated 2851
Ships to you
between Tue. 28 May to Fri. 31 May Calender.png

USD 0.0366
Multiples of: 10

380 mA60 V2 OhmsN - Channel 500 mV- 55 C+ 150 C590 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4.5 V0.5 nCEnhancement  
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