X-On Electronics has gained recognition as a prominent supplier of DMN53D0LDW-7 MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMN53D0LDW-7 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

DMN53D0LDW-7 Diodes Incorporated

Name: DMN53D0LDW-7
Brand: Diodes Incorporated
SKU: DMN53D0LDW7_Diodes_Incorporated
Availability: InStock
Rating: 5 (11 reviews)

DMN53D0LDW-7 electronic component of Diodes Incorporated

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See Product Specifications

Part No.	DMN53D0LDW-7
Manufacturer:	Diodes Incorporated
Category:	MOSFETs
Description:	MOSFET N-Ch 50Vds 20Vgs FET Enh Mode 46pF 1.5Vgs
Datasheet:	DMN53D0LDW-7 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

5: USD 0.1278 ea
Line Total: USD 0.64

Availability - 257
Ship by Fri. 23 May to Wed. 28 May

MOQ: 5 Multiples: 5
Pack Size: 5

DMN53D0LDW-7 More Buying Options & Price Grid(s)

Please wait...

Availability Price Buy Price Quantity

257

Ship by Fri. 23 May to Wed. 28 May

MOQ : 5
Multiples : 5

5 : USD 0.1278
50 : USD 0.1018
150 : USD 0.0886
500 : USD 0.0591
3000 : USD 0.0478
6000 : USD 0.0451

1487

Ship by Wed. 14 May to Fri. 16 May

MOQ : 1
Multiples : 1

1 : USD 0.35
10 : USD 0.2184
50 : USD 0.154
100 : USD 0.133
250 : USD 0.0742

Specifications

Manufacturer

Diodes Incorporated Diodes Incorporated

Product Category

MOSFETs MOSFETs

RoHS - XON

Y Y

Id - Continuous Drain Current

360 mA 360 mA

Vds - Drain-Source Breakdown Voltage

50 V 50 V

Rds On - Drain-Source Resistance

1.6 Ohms 1.6 Ohms

Transistor Polarity

N - Channel N - Channel

Vgs th - Gate-Source Threshold Voltage

800 mV 800 mV

Minimum Operating Temperature

- 55 C - 55 C

Maximum Operating Temperature

+ 150 C + 150 C

Pd - Power Dissipation

310 mW 310 mW

Mounting Style

Smd/Smt Smd/Smt

Package / Case

SOT - 363 - 6 SOT - 363 - 6

Packaging

Cut Tape Cut Tape

Technology

Si Si

Number of Channels

2 Channel 2 Channel

Vgs - Gate-Source Voltage

10 V 10 V

Qg - Gate Charge

0.6 nC , 0.6 nC 0.6 nC , 0.6 nC

Channel Mode

Enhancement Enhancement

Configuration

Dual Dual

Series

Dmn53 Dmn53

Transistor Type

2 N - Channel 2 N - Channel

Brand

Diodes Incorporated Diodes Incorporated

Cnhts

8541210000 8541210000

Fall Time

11 ns , 11 ns 11 ns , 11 ns

Hts Code

8541210095 8541210095

Mxhts

85412101 85412101

Product Type

Mosfet Mosfet

Rise Time

2.5 ns , 2.5 ns 2.5 ns , 2.5 ns

Factory Pack Quantity :

3000 3000

Subcategory

Mosfets Mosfets

Taric

8541210000 8541210000

Typical Turn-Off Delay Time

19 ns , 19 ns 19 ns , 19 ns

Typical Turn-On Delay Time

2.7 ns , 2.7 ns 2.7 ns , 2.7 ns

Notes:- Show Stocked Products With Similar Attributes.

DMN53D0LDW-7 Alternative Parts

We are delighted to provide the DMN53D0LDW-7 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMN53D0LDW-7 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The DMN53D0LDW-7 is a MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) from Diodes Incorporated, characterized by an N-Channel type of FET with an enhancement mode at 46pF, a voltage rating of 50V with a gate source voltage of 1.5V and a gate source voltage of 20V. It is designed to provide a high input impedance enabling it to act as a switch or amplifier. Its low on-state resistance, low threshold voltage and high current capacity make it ideal for a broad range of applications including high speed logic, power switching and power supply sequencing.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

DIO may also be referenced as

Diodes
DIODES INC
DIODES INC / ZETEX
DIODES INC.
Diodes Inc. / Pericom
Diodes Zetex
DiodesZetex
PAM(Diodes Inc)
PER
Pericom
PERICOM SEMI
Pericom Semiconductor
Pericom Technology
Pericom/Diodes
ZTX

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Availability	Price	Buy Price	Quantity
257 Ship by Fri. 23 May to Wed. 28 May MOQ : 5 Multiples : 5	5 : USD 0.1278 50 : USD 0.1018 150 : USD 0.0886 500 : USD 0.0591 3000 : USD 0.0478 6000 : USD 0.0451

1487 Ship by Wed. 14 May to Fri. 16 May MOQ : 1 Multiples : 1	1 : USD 0.35 10 : USD 0.2184 50 : USD 0.154 100 : USD 0.133 250 : USD 0.0742

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