BSS138K 50V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance I Max D BV R Max DSS DS(ON) Low Input Capacitance T = +25C A Fast Switching Speed 50V 0.31A 3.5 V = 10V GS ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q101, PPAP capable, and manufactured in IATF 16949 certified facilities), please Description and Applications contact us or your local Diodes representative. BSS138K Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 50 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C 0.31 A Continuous Drain Current (Note 6) V = 10V I A GS D State 0.25 T = +70C A Maximum Continuous Body Diode Forward Current (Note 6) 0.5 A I S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 0.8 A I DM Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 0.38 W P D Thermal Resistance, Junction to Ambient (Note 5) Steady State 338 C/W R JA Total Power Dissipation (Note 6) 0.54 W P D Thermal Resistance, Junction to Ambient (Note 6) Steady State 237 C/W R JA Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 50 V BV V = 0V, I = 250A DSS GS D 1 A Zero Gate Voltage Drain Current T = +25C I V = 50V, V = 0V J DSS DS GS Gate-Source Leakage 10 A I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 0.5 1.1 1.5 V V V = V , I = 250A GS(TH) DS GS D Static Drain-Source On-Resistance 1.3 3.5 R V = 10V, I = 0.22A DS(ON) GS D Diode Forward Voltage V 0.8 1.2 V V = 0V, I = 0.22A SD GS D DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 23.2 pF Ciss V = 25V, V = 0V DS GS Output Capacitance C 3.1 pF oss f = 1.0MHz Reverse Transfer Capacitance C 2.2 pF rss Gate Resistance R 69 V = 0V, V = 0V, f = 1MHz g DS GS Total Gate Charge (V = 4.5V) Q 0.45 nC GS g Total Gate Charge (V = 10V) Q 0.95 nC GS g V = 25V, I = 0.2A DS D Gate-Source Charge Q 0.10 nC gs Gate-Drain Charge Q 0.14 nC gd Turn-On Delay Time t 3.2 ns D(ON) Turn-On Rise Time t 2.5 ns R V = 25V, V = 10V, DS GS Turn-Off Delay Time ns R = 50, I = 0.2A t 13.8 G D D(OFF) Turn-Off Fall Time ns t 7.6 F Reverse Recovery Time 8.8 ns t I = 0.2A, di/dt = 100A/s RR F Reverse Recovery Charge 2.6 nC Q I = 0.2A, di/dt = 100A/s RR F Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Device mounted on 1 x 1 FR-4 PCB with high coverage 2oz. Copper, single sided. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 7 BSS138K October 2019 Diodes Incorporated www.diodes.com Document number: DS39383 Rev. 3 - 2 NEW PRODUCT