About MOSFET

Nexperia MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFET

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  Vds - Drain-source Breakdown Voltage
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  Rds On - Drain-source Resistance
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  Transistor Polarity
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Minimum Operating Temperature
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  Pd - Power Dissipation
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  Mounting Style
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  Package / Case
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  Vgs - Gate-source Voltage
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  Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSS138PW,115


N-Channel 60 V 320mA (Ta) 260mW (Ta), 830mW (Tc) Surface Mount SOT-323
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Nexperia 449446
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USD 0.0255
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320 mA60 V1.6 OhmsN - Channel 900 mV- 55 C+ 150 C310 mWSmdsmtSOT - 323 - 3ReelSi1 Channel10 V0.72 nCEnhancement  
BSS138AKAR


N-Channel 60 V 200mA (Ta) 300mW (Ta), 1.06W (Tc) Surface Mount TO-236AB
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Nexperia 425582
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USD 0.0333
Multiples of: 1

                   
BSS138BKS,115


NXP Semiconductors MOSFET 60 V, 320 mA dual N-ch Trench MOSFET
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Nexperia 417453
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USD 0.0541
Multiples of: 1

320 mA60 V1.6 OhmsN - Channel 480 mV- 55 C+ 150 C280 mWSmd/SmtSOT - 363 - 6ReelSi2 Channel20 V0.7 nCEnhancement  
BSS138BKW,115


N-Channel 60 V 320mA (Ta) 260mW (Ta), 830mW (Tc) Surface Mount SOT-323
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Nexperia 407986
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USD 0.0414
Multiples of: 1

   N - Channel     Smd/SmtSOT - 323Reel       
PMV55ENEAR


MOSFET PMV55ENEA/TO-236AB/REEL 7" Q3/
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Nexperia 399069
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USD 0.1208
Multiples of: 1

3.1 A60 V60 mOhmsN - Channel 1.3 V- 55 C+ 150 C1.19 WSmd/SmtSOT - 23 - 3ReelSi1 Channel10 V12.7 nCEnhancement  
BSS84,215


P-Channel 50 V 130mA (Ta) 250mW (Tc) Surface Mount TO-236AB
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Nexperia 395760
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USD 0.0301
Multiples of: 3000

   P - Channel  - 65 C+ 150 C Smd/SmtSOT - 23Reel       
2N7002P,235


N-Channel 60 V 360mA (Ta) 350mW (Ta) Surface Mount TO-236AB
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Nexperia 302337
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USD 0.0241
Multiples of: 1

   N - Channel     Smd/SmtSOT - 23Reel       
NX138AKR


Transistor: N-MOSFET; unipolar; 60V; 0.12A; 0.265W; SOT23
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Nexperia 277331
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USD 0.0184
Multiples of: 1

                   
NX7002AKS,115


NXP Semiconductors MOSFET 60 V, single N-chan Trench MOSFET
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Nexperia 275225
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USD 0.0379
Multiples of: 1

170 mA60 V3 OhmsN - Channel 1.6 V- 55 C+ 150 C1.06 WSmd/SmtTSSOP - 6ReelSi2 Channel 0.33 nCEnhancement  
BSH105,215


N-Channel 20 V 1.05A (Ta) 417mW (Ta) Surface Mount TO-236AB
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Nexperia 269626
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USD 0.0862
Multiples of: 1

   N Channel      SOT - 23Reel       
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