About MOSFET

Nexperia MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFET

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  Id - Continuous Drain Current
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  Vds - Drain-source Breakdown Voltage
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  Rds On - Drain-source Resistance
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  Transistor Polarity
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Pd - Power Dissipation
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  Mounting Style
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  Number Of Channels
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  Vgs - Gate-source Voltage
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  Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSS138BKVL


MOSFET BSS138BK/TO-236AB/REEL 11" Q3/
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Nexperia 116337
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USD 0.0516
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360 mA60 V1.6 OhmsN - Channel 480 mV- 55 C+ 150 C1.14 WSmd/SmtTO - 236AB - 3Cut TapeSi1 Channel10 V0.6 nCEnhancement  
PMV50EPEAR


MOSFET PMV50EPEA/TO-236AB/REEL 7" Q3/
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Nexperia 112904
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USD 0.1024
Multiples of: 1

4.2 A30 V45 mOhmsP - Channel 1 V- 55 C+ 150 C1.2 WSmd/SmtSOT - 23 - 3ReelSi1 Channel- 10 V12.8 nCEnhancement  
NX6008NBKR


MOSFET NX6008NBK/SOT23/TO-236AB
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Nexperia 111898
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USD 0.0291
Multiples of: 1

270 mA60 V2.8 OhmsN - Channel 900 mV- 55 C+ 150 C330 mWSMD/SMTSOT - 23 - 3Reel , Cut Tape 1 Channel- 8 V , + 8 V500 pCEnhancement  
BUK9Y59-60E,115


MOSFET BUK9Y59-60E/LFPAK/REEL7
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Nexperia 111481
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USD 0.2714
Multiples of: 1

16.7 A60 V51 mOhmsN - Channel10 V1.7 V- 55 C+ 175 C37 WSmd/SmtLFPAK56 - 4ReelSi1 Channel10 V6.1 nC   
PMZB350UPE,315


P-Channel 20 V 1A (Ta) 360mW (Ta), 3.125W (Tc) Surface Mount DFN1006B-3
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Nexperia 106700
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USD 0.0537
Multiples of: 10000

- 1.4 A- 20 V940 mOhmsP - Channel - 450 mV- 55 C+ 150 C715 mWSmd/SmtDFN1006B - 3ReelSi2 Channel+/- 8 V1.3 nCEnhancement  
BUK9Y113-100E,115


MOSFET N-channel 100 V 113 mo FET
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Nexperia 106267
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USD 0.2335
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12 A100 V97 mOhmsN - Channel 1.7 V- 55 C+ 175 C45 WSmd/SmtLFPAK56 - 5ReelSi1 Channel15 V8.4 nCEnhancement  
PMV48XPA2R


MOSFET PMV48XPA2R
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Nexperia 105997
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USD 0.092
Multiples of: 1

           Cut Tape       
PMV50XPR


P-Channel 20 V 3.6A (Ta) 490mW (Ta), 4.63W (Tc) Surface Mount TO-236AB
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Nexperia 104955
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USD 0.1035
Multiples of: 1

- 4.4 A- 20 V48 mOhmsP - Channel12 V- 900 mV- 55 C+ 150 C1.096 WSmd/SmtSOT - 23 - 3ReelSi1 Channel12 V7.7 nCEnhancement  
PMV20ENR


N-Channel 30 V 6A (Ta) 510mW (Ta), 6.94W (Tc) Surface Mount TO-236AB
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Nexperia 102802
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USD 0.0713
Multiples of: 1

7.6 A30 V21 mOhmsN - Channel 1 V- 55 C+ 150 C1.2 WSmd/SmtTO - 236AB - 3Cut TapeSi1 Channel10 V7.2 nCEnhancement  
PMV60ENEAR


MOSFET PMV60ENEASOT23TO-236AB
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Nexperia 95642
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USD 0.092
Multiples of: 1

3 A40 V75 mOhmsN - Channel 1 V- 55 C+ 175 C1.25 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel20 V3.6 nCEnhancementAec - Q101 
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