About MOSFET

Nexperia MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFET

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  Id - Continuous Drain Current
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  Vds - Drain-source Breakdown Voltage
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  Rds On - Drain-source Resistance
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Pd - Power Dissipation
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  Vgs - Gate-source Voltage
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  Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
PMV250EPEAR


MOSFET 40V P-channel Trench MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Nexperia 232235
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USD 0.0655
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1.5 A40 V240 mOhmsP - Channel 1 V- 55 C+ 150 C890 mWSmd/SmtTO - 236AB - 3Cut TapeSi1 Channel10 V4.7 nCEnhancement  
PMGD280UN,115


Mosfet Array 2 N-Channel (Dual) 20V 870mA 400mW Surface Mount 6-TSSOP
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Nexperia 227579
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USD 0.0748
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870 mA20 V340 mOhmsN - Channel 450 mV- 55 C+ 150 C0.4 WSmd/SmtSOT - 363ReelSi2 Channel4.5 V0.89 nCEnhancement  
PMZ950UPELYL


MOSFET PMZ950UPEL/XQFN3/REEL 7" Q1/T1
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Nexperia 226526
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USD 0.0563
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           Cut TapeSi      
PMV30XPEAR


MOSFET PMV30XPEA/TO-236AB/REEL 7" Q3/
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Nexperia 218062
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USD 0.1116
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5.3 A20 V34 mOhmsP - Channel 750 mV- 55 C+ 150 C980 mWSmd/SmtTO - 236AB - 3ReelSi1 Channel- 4.5 V11 nCEnhancement  
PMV37ENEAR


MOSFET 60V N-CHANNEL
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Nexperia 211406
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USD 0.1
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BSH203,215


P-Channel 30 V 470mA (Ta) 417mW (Ta) Surface Mount TO-236AB
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Nexperia 210912
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USD 0.092
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470 mA30 V900 mOhmsP - Channel 400 mV- 55 C+ 150 C417 mWSmd/SmtSOT - 23ReelSi1 Channel- 4.5 V2.2 nCEnhancement  
PMV48XP,215


P-Channel 20 V 3.5A (Ta) 510mW (Ta) Surface Mount TO-236AB
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Nexperia 206610
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USD 0.1267
Multiples of: 3000

- 3.5 A- 20 V55 mOhmsP - Channel 750 mV- 55 C+ 150 C510 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel- 4.5 V11 nCEnhancement  
2N7002BKVL


MOSFET 2N7002BK/TO-236AB/REEL 11" Q3/
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Nexperia 205216
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USD 0.0265
Multiples of: 1

350 mA60 V1 OhmsN - Channel 1.1 V- 55 C+ 150 C440 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel20 V600 pCEnhancement  
NX138AKSX


MOSFET NX138AKS/SC-88/REEL 7" Q1/T1 *
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Nexperia 197880
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USD 0.0338
Multiples of: 3000

           Cut TapeSi      
BSS84AKVL


MOSFET BSS84AK/TO-236AB/REEL 11" Q3/T
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Nexperia 196589
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USD 0.0324
Multiples of: 1

         Smd/SmtSOT - 666 - 6Cut TapeSi      
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