About MOSFET

Nexperia MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFET

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  Id - Continuous Drain Current
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  Vds - Drain-source Breakdown Voltage
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  Rds On - Drain-source Resistance
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  Transistor Polarity
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Minimum Operating Temperature
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  Maximum Operating Temperature
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  Pd - Power Dissipation
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  Mounting Style
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  Package / Case
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  Packaging
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  Technology
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  Number Of Channels
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  Vgs - Gate-source Voltage
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  Qg - Gate Charge
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  Channel Mode
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  Qualification
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  Tradename
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
PMX100UNZ


MOSFET MOSFET DISCRETES
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Nexperia 95263
Ships to you
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USD 0.0816
Multiples of: 1

1.3 A20 V210 mOhmsN - Channel 900 mV- 55 C+ 150 C500 mWSMD/SMTDFN0603 - 3Cut Tape , ReelSi1 Channel- 12 V , + 12 V1.5 nCEnhancement  
2N7002BKW,115


MOSFET Single N-Channel 60V 300mA
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Nexperia 89870
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USD 0.0229
Multiples of: 10

310 mA60 V1.6 OhmsN - Channel 1.1 V- 55 C+ 150 C330 mW (1/3 w)Smd/SmtSOT - 323ReelSi1 Channel10 V0.5 nCEnhancement  
PMV20XNER


N-Channel 30 V 5.7A (Ta) 510mW (Ta), 6.94W (Tc) Surface Mount TO-236AB
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Nexperia 89289
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USD 0.1
Multiples of: 1

7.2 A30 V23 mOhmsN - Channel12 V400 mV- 55 C+ 150 C1.2 WSmd/SmtSOT - 23 - 3ReelSi1 Channel4.5 V12.4 nCEnhancement  
BUK9Y25-80E,115


MOSFET N-channel 80 V 27 mo FET
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Nexperia 88791
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USD 0.3795
Multiples of: 1

37 A80 V22.2 mOhmsN - Channel 1.7 V- 55 C+ 175 C95 WSmd/SmtLFPAK56 - 5ReelSi1 Channel15 V17.1 nCEnhancement  
PMV164ENEAR


MOSFET PMV164ENEASOT23TO-236AB
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Nexperia 86925
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USD 0.0541
Multiples of: 1

1.6 A60 V473 mOhmsN - Channel 1.3 V- 55 C+ 175 C1.25 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel20 V2.5 nCEnhancementAec - Q101 
BUK7M22-80EX


MOSFET BUK7M22-80E/MLFPAK/REEL 7" Q1/
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Nexperia 83880
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USD 0.3979
Multiples of: 1

           Cut TapeSi      
BUK9875-100ACUX


NXP Semiconductors MOSFET N-channel TrenchMOS logic level FET
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Nexperia 83804
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USD 0.3231
Multiples of: 1

7 A100 V72 mOhmsN - Channel 1 V- 55 C+ 150 C8 WSmd/SmtSOT - 223 - 3ReelSi1 Channel10 V Enhancement  
BST82,215


100V 190mA 10O@150mA,5V 830mW null SOT-23 MOSFETs ROHS
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Nexperia 80349
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USD 0.0862
Multiples of: 1

190 mA100 V10 OhmsN - Channel 1 V- 65 C+ 150 C830 mWSmd/SmtSOT - 23ReelSi1 Channel5 V Enhancement  
NX7002BKMYL


N-Channel 60 V 350mA (Ta) 350mW (Ta), 3.1W (Tc) Surface Mount SOT-883
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Nexperia 80199
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USD 0.0276
Multiples of: 1

350 mA60 V2.2 OhmsN - Channel 1.1 V- 55 C+ 150 C680 mWSmd/SmtDFN1006 - 3ReelSi1 Channel20 V1 nCEnhancement  
BSS123,215


N-Channel 100 V 150mA (Ta) 250mW (Ta) Surface Mount TO-236AB
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Nexperia 79171
Ships to you
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USD 0.0299
Multiples of: 1

150 mA100 V6 OhmsN - Channel 1 V- 55 C150 C250 mW (1/4 w)SmdsmtSOT - 23 - 3ReelSi1 Channel10 V Enhancement  
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