About MOSFET

Nexperia MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFET

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  Id - Continuous Drain Current
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  Vds - Drain-source Breakdown Voltage
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  Rds On - Drain-source Resistance
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  Transistor Polarity
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Pd - Power Dissipation
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  Mounting Style
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  Number Of Channels
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  Vgs - Gate-source Voltage
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  Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
PMGD290XN,115


Mosfet Array 2 N-Channel (Dual) 20V 860mA 410mW Surface Mount 6-TSSOP
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Nexperia 181491
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USD 0.0748
Multiples of: 1

860 mA20 V350 mOhmsN - Channel 500 mV- 55 C+ 150 C0.41 WSmd/SmtSOT - 363ReelSi2 Channel4.5 V0.72 nCEnhancement  
PMV280ENEAR


MOSFET PMV280ENEA/SOT23 TO-236AB
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Nexperia 178473
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USD 0.0882
Multiples of: 1

1.1 A100 V385 mOhmsN - Channel 1.3 V- 55 C+ 150 C1.14 WSmd/SmtTO - 236AB - 3 Si1 Channel20 V6.8 nCEnhancement  
NX3008CBKS.115


SOT-363 MOSFETs ROHS
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Nexperia 174600
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USD 0.0587
Multiples of: 3000

                   
PMCM6501VPEZ


MOSFET 12V P-Channel Trench MOSFET
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Nexperia 164845
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USD 0.2065
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           Cut TapeSi      
PMV28XPEAR


MOSFET MOS DISCRETES
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Nexperia 159485
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USD 0.1314
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           Cut Tape       
PMF170XP,115


P-Channel 20 V 1A (Ta) 290mW (Ta), 1.67W (Tc) Surface Mount SOT-323
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Nexperia 157663
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USD 0.0391
Multiples of: 1

1 A20 V200 mOhmsP - Channel 650 mV- 55 C+ 150 C360 mWSmd/SmtSOT - 323ReelSi1 Channel4.5 V2.6 nCEnhancement  
PSMN5R6-60YLX


MOSFET PSMN5R6-60YL/LFPAK/REEL 7" Q1/
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Nexperia 153198
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USD 0.4439
Multiples of: 1

100 A60 V5.6 mOhmsN - Channel 1.4 V- 55 C+ 175 C167 WSmd/SmtLFPAK56 - 4ReelSi1 Channel10 V66.8 nCEnhancement  
PMN40SNAX


60V 4.7A 36mO@4.7A,10V 1.8W N Channel TSOP-6 MOSFETs ROHS
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Nexperia 141323
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USD 0.1414
Multiples of: 1

4.7 A60 V36 mOhmsN - Channel 4 V- 55 C+ 175 C1.7 WSMD/SMTSOT - 457 - 6Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V9 nCEnhancement  
BUK78150-55ACUX


NXP Semiconductors MOSFET N-channel TrenchMOS standard level FET
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Nexperia 133536
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USD 0.1322
Multiples of: 1

5.5 A55 V150 mOhmsN - Channel 2 V- 55 C+ 150 C8 WSmd/SmtSOT - 223 - 3ReelSi1 Channel10 V Enhancement  
PMCPB5530X,115


Mosfet Array N and P-Channel 20V 4A (Ta), 3.4A (Ta) 490mW Surface Mount 6-HUSON (2x2)
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Nexperia 119155
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USD 0.1564
Multiples of: 1

5.3 A20 V70 mOhmsN And P - Channel 0.65 v , - 0.65 V- 55 C+ 150 C8.33 WSmd/SmtDFN2020 - 6ReelSi2 Channel 14.4 nC , 8.1 nCEnhancement  
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