PMX100UNZ

PMX100UN 20 V, N-channel Trench MOSFET 2 December 2021 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0603-3 (SOT8013) Surface-Mounted Device (SMD) using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Leadless ultra small package 0.63 x 0.33 x 0.25 mm Trench MOSFET technology Low profile (0.25 mm) 3. Applications Battery switch High-speed line driver Low-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - 20 V DS j V gate-source voltage -12 - 12 V GS I drain current V = 4.5 V T = 25 C 1 - - 1.3 A D GS amb Static characteristics R drain-source on-state V = 4.5 V I = 1 A T = 25 C - 122 210 m DSon GS D j resistance 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 1 cm .Nexperia PMX100UN 20 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate D 2 S source 11 2 3 3 D drain G Transparent top view mbb076 S DFN0603-3 (SOT8013) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMX100UN DFN0603-3 DFN0603-3 plastic, ultra small and leadless full SOT8013 encapsulated package 3 terminals 0.225 mm pitch 0.63 mm x 0.33 mm x 0.25 mm body 7. Marking Table 4. Marking codes Type number Marking code R PMX100UN PMX100UN All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2021. All rights reserved Product data sheet 2 December 2021 2 / 14