DMG7401SFGQ P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits I Max D Low R Ensures On-State Losses Are Minimized DS(ON) V R Max (BR)DSS DS(ON) T = +25C A Small form factor thermally efficient package enables higher density end products 13m V = -10V -9.8A GS -30V Occupies just 33% of the board area occupied by SO-8 enabling 25m V = -4.5V -7.0A GS smaller end product Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description Qualified to AEC-Q101 Standards for High Reliability This MOSFET is designed to minimize the on-state resistance PPAP Capable (Note 4) (R ) and yet maintain superior switching performance, making it DS(ON) ideal for high-efficiency power management applications. Mechanical Data Applications Case: POWERDI 3333-8 Backlighting Case Material: Molded Plastic,Gree Molding Compound. Power Management Functions UL Flammability Classification Rating 94V-0 DC-DC Converters Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.0174 grams (Approximate) POWERDI3333-8 D Pin 1 S S S G G D D ESD PROTECTED D Gate Protection S D Diode Equivalent Circuit Top View Bottom View Ordering Information (Note 5) Part Number Case Packaging DMG7401SFGQ-7 POWERDI3333-8 2,000/Tape & Reel DMG7401SFGQ-13 POWERDI3333-8 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMG7401SFGQ Marking Information G75 = Product Marking Code YYWW = Date Code Marking YY = Last Digit of Year (ex: 10 for 2010) WW = Week Code (01 53) G75 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V -30 V DSS Gate-Source Voltage 25 V VGSS Steady T = +25C -9.8 A A I D State -7.7 T = +70C A Continuous Drain Current (Note 7) VGS = -10V T = +25C -13.5 A t<10s I A D -10.8 T = +70C A Maximum Continuous Body Diode Forward Current (Note 6) -3.0 A IS Pulsed Drain Current (10s pulse, duty cycle = 1%) -80 A I DM Avalanche Current (Notes 8 & 9) 14 A I AR Repetitive Avalanche Energy (Notes 8 & 9) L = 1mH 104 mJ E AR Thermal Characteristics Characteristic Symbol Value Units 0.94 T = +25C A Total Power Dissipation (Note 6) P W D 0.6 T = +70C A Steady State 137 C/W Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 82 C/W 2.2 T = +25C A Total Power Dissipation (Note 7) P W D 1.3 T = +70C A Steady State 60 C/W Thermal Resistance, Junction to Ambient (Note 7) R JA t<10s 36 C/W Thermal Resistance, Junction to Case (Note 7) 3.0 C/W R JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate. 8. I and E rating are based on low frequency and duty cycles to keep T = +25C. AR AR J 2 of 8 DMG7401SFGQ September 2015 Diodes Incorporated www.diodes.com Document number: DS37980 Rev. 2 - 2 NEW PRODUCT YYWW