DMN2230UQ N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance I max D BV R max DSS DS(ON) Low Gate Threshold Voltage T = +25C A Low Input Capacitance 110m V = 4.5V Fast Switching Speed GS 2A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 145m V = 2.5V GS 1.7A Halogen and Antimony Free. Green Device (Note 3) 20V Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) 230m V = 1.8V 1.3A GS Mechanical Data Description and Applications Case: SOT23 This MOSFET is designed to minimize the on-state resistance (R ) and yet maintain superior switching performance, making it Case Material: Molded Plastic, Green Molding Compound. DS(on) ideal for high-efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 General Purpose Interfacing Switch Terminal Connections: See Diagram Power Management Functions Terminals: Finish Matte Tin Annealed over Copper Boost Application Leadframe. Solderable per MIL-STD-202, Method 208 Analog Switch Weight: 0.008 grams (Approximate) SOT23 D G S Top View Top View Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMN2230UQ-7 SOT23 3,000/Tape & Reel DMN2230UQ-13 SOT23 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN2230UQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 20 V DSS Gate-Source Voltage V 12 V GSS Drain Current (Note 6) I 2.0 A D Pulsed Drain Current (Note 7) I 7 A DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Total Power Dissipation (Note 6) P 600 mW D Thermal Resistance, Junction to Ambient 208 C/W R JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV 20 V V = 0V, I = 10A DSS GS D Zero Gate Voltage Drain Current I 1 A V = 20V, V = 0V DSS DS GS Gate-Source Leakage I 10 A V = 12V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V 0.5 1.0 V V = V , I = 250A GS(th) DS CS D V = 4.5V, I = 2.5A GS D 81 110 Static Drain-Source On-Resistance 113 145 m RDS (ON) VGS = 2.5V, ID = 1.5A 170 230 V = 1.8V, I = 1.0A GS D Forward Transfer Admittance 5 S Y V = 5V, I = 2.4A fs DS D Diode Forward Voltage (Note 8) 0.8 1.1 V V V = 0V, I = 1.05A SD GS S DYNAMIC CHARACTERISTICS Input Capacitance 188 pF C iss V = 10V, V = 0V DS GS Output Capacitance 44 pF C oss f = 1.0MHz Reverse Transfer Capacitance 30 pF C rss Total Gate Charge Q 2.3 nC g Gate-Source Charge Q 0.3 nC V = 10V, I = 11.6A gs DS D Gate-Drain Charge Q 0.5 nC gd Turn-On Delay Time t 8 d(on) Rise Time 3.8 tr V = 10V, R = 10 DD L ns Turn-Off Delay Time 19.6 I = 1A, V = 4.5V, R = 6 t D GEN G d(off) Fall Time 8.3 t f Notes: 6. Device mounted on FR-4 PCB, or minimum recommended pad layout. 7. Repetitive rating, pulse width limited by junction temperature. 8. Short duration pulse test used to minimize self-heating effect. 2 of 5 DMN2230UQ June 2015 Diodes Incorporated www.diodes.com Document number: DS37497 Rev. 1 - 2 NEW PRODUCT