About MOSFETs

MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AP3404S


30V 6.5A 20mΩ@10V,6.5A 1.4W 1.6V@250uA N Channel SOT-23-3 MOSFETs ROHS
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Quan Li Availability : 117724
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USD 0.0493

Multiples of: 10

                   
SI2302-2.3A


20V 2.3A SOT-23 MOSFETs ROHS
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JSMSEMI Availability : 116598
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USD 0.0056

Multiples of: 50

                   
ZXM61N03FTA


MOSFET 30V N-Chnl HDMOS
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Diodes Incorporated Availability : 116400
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USD 0.1105

Multiples of: 3000

1.4 A30 V220 mOhmsN - Channel 1 V- 55 C+ 150 C625 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V Enhancement  
STD20NF20


Transistor: N-MOSFET; unipolar; 200V; 11A; 110W; DPAK
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STMicroelectronics Availability : 116400
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USD 1.0352

Multiples of: 2500

                   
3400


30V 5.8A 25mΩ 1.3V N Channel SOT23 MOSFETs ROHS
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HL Availability : 115507
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USD 0.0125

Multiples of: 20

                   
2SK3018


MOSFET SOT23 RoHS
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TWGMC Availability : 114691
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USD 0.0118

Multiples of: 50

                   
DMN62D0UDW-7


MOSFET N-Ch Enh Mode FET 60V 20Vgss 1.2A
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Diodes Incorporated Availability : 114331
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USD 0.0572

Multiples of: 1

350 mA , 350 mA60 v , 60 V1.2 Ohms , 1.2 OhmsN - Channel 500 mV , 500 mV- 55 C+ 150 C320 mWSmd/SmtSOT - 363 - 6ReelSi2 Channel+/- 20 v , +/- 20 V500 pC , 500 pCEnhancement  
DMP3035LSS-13


Diodes Incorporated MOSFET SINGLE P-CHANNEL
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Diodes Incorporated Availability : 113975
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USD 0.2502

Multiples of: 2500

11 A- 30 V14 mOhmsP - Channel25 V - 55 C+ 150 C2 WSmd/SmtSOP - 8ReelSi1 Channel25 V Enhancement  
DMP2018LFK-7


MOSFET MOSFET BVDSS: 8V-24V U-DFN2523-6 T&R 3K
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Diodes Incorporated Availability : 113635
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USD 0.1452

Multiples of: 1

9.2 A20 V16 mOhmsP - Channel 1.2 V- 55 C+ 150 C2.1 WSmd/SmtU - DFN2523 - 6Cut TapeSi1 Channel4.5 V53 nCEnhancement  
FDMD8260L


MOSFET 60V/20V Dual N-Ch PowerTrench MOSFET
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ON Semiconductor Availability : 113599
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USD 1.8906

Multiples of: 1

15 A , 15 A60 v , 60 V8.7 mOhms , 8.7 mOhmsn - channel 1 v , 1 V- 55 C+ 150 C37 Wsmd/smtPOWER - 12Reelsi2 channel+/- 20 v , +/- 20 V49 nC , 49 nCenhancement power clip
AO3400A


30V 6A 19m@10V,6.0A 1.4W 1V@250uA 1PCSNChannel SOT-23-3L MOSFETs ROHS
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ElecSuper Availability : 112655
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USD 0.0183

Multiples of: 20

                   
SI2319DS-T1-E3


MOSFET 40V 3.0A 1.25W 82 mohms @ 10V
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Vishay Availability : 112633
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USD 0.2706

Multiples of: 1

3.0 A40 V82 mOhmsP - Channel 1 V- 55 C+ 150 C1.25 WSmd/SmtTO - 236 - 3ReelSi1 Channel- 10 V17 nCEnhancement Trenchfet
SQD50P04-13L_GE3


P-Channel 40 V 50A (Tc) 3W (Ta), 136W (Tc) Surface Mount TO-252AA
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Vishay Availability : 112520
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USD 0.7023

Multiples of: 2000

- 50 A- 40 V10 mOhmsP - Channel 2.5 V- 55 C+ 175 C83 WSmd/SmtTO - 252 - 3ReelSi1 Channel20 V60 nCEnhancementAec - Q101Trenchfet
STP12NM50


Transistor: N-MOSFET; unipolar; 500V; 7.5A; 160W; TO220-3
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STMicroelectronics Availability : 112320
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USD 1.7452

Multiples of: 1

                   
2N7002K 72K


60V 300mA 2.8Ω@10V,500mA 225mW 2.5V@250uA N Channel -55℃~+150℃@(Tj) SOT-23 MOSFETs ROHS
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FOSAN Availability : 111456
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USD 0.0081

Multiples of: 50

                   
PMZB290UNE2YL


N-Channel 20 V 1.2A (Ta) 350mW (Ta), 5.43W (Tc) Surface Mount DFN1006B-3
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Nexperia Availability : 48500
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USD 0.0323

Multiples of: 10000

1.2 A20 V320 mOhmsN - Channel 450 mV- 55 C+ 150 C715 mWSmd/SmtDFN1006B - 3ReelSi1 Channel4.5 V0.8 nCEnhancement  
BSS84AKW,115


P-Channel 50 V 150mA (Ta) 260mW (Ta), 830mW (Tc) Surface Mount SOT-323
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Nexperia Availability : 32010
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USD 0.026

Multiples of: 1

   P - Channel     Smdsmt Reel       
NTUD3169CZT5G


ON Semiconductor MOSFET 20V Mosfet Complementary
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ON Semiconductor Availability : 20925
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USD 0.0494

Multiples of: 1

220 mA20 V1.5 Ohms , 5 OhmsN - Channel, P - Channel8 V - 55 C+ 150 C200 mWSmd/SmtSOT - 963 - 6Reel    Enhancement  
Hot IRF3205STRLPBF


MOSFET N Trench 55V 110A 4V @ 250uA 8 mΩ @ 62A,10V TO-263-2 RoHS
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Infineon Availability : 11867
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USD 0.4142

Multiples of: 1

            Hexfet®      
BSH203,215


P-Channel 30 V 470mA (Ta) 417mW (Ta) Surface Mount TO-236AB
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Nexperia Availability : 0
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USD 0.0781

Multiples of: 1

470 mA30 V900 mOhmsP - Channel 400 mV- 55 C+ 150 C417 mWSmd/SmtSOT - 23ReelSi1 Channel- 4.5 V2.2 nCEnhancement  
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