About MOSFETs

MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFETs

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  Id - Continuous Drain Current
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  Vds - Drain-source Breakdown Voltage
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  Rds On - Drain-source Resistance
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  Transistor Polarity
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Minimum Operating Temperature
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  Pd - Power Dissipation
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  Qg - Gate Charge
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Image  Information Image Stock Code(▲▼)Description
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDD4141_F085


MOSFET Trans MOS P-Ch 40V 10.8A 3-Pin 2+Tab
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ON Semiconductor Availability : 105730
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USD 0.6656

Multiples of: 1

50 A40 V12.3 mOhmsP - Channel  - 55 C+ 150 C2.4 WSmd/SmtTO - 252ReelSi1 Channel20 V Enhancement Powertrench
2N7002-HXY


60V 300mA 350mW 2Ω@10V,0.5A 1.9V@250uA N Channel SOT-23 MOSFETs ROHS
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HXY MOS Availability : 105303
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USD 0.0064

Multiples of: 20

                   
PMGD290XN,115


Mosfet Array 2 N-Channel (Dual) 20V 860mA 410mW Surface Mount 6-TSSOP
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Nexperia Availability : 105252
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USD 0.0704

Multiples of: 1

860 mA20 V350 mOhmsN - Channel 500 mV- 55 C+ 150 C0.41 WSmd/SmtSOT - 363ReelSi2 Channel4.5 V0.72 nCEnhancement  
DMN21D2UFB-7B


Diodes Incorporated MOSFET MOSFET BVDSS: 8V-24V X1-DFN1006-3 T&R 10K
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Diodes Incorporated Availability : 105173
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USD 0.0726

Multiples of: 1

760 mA20 V3 OhmsN - Channel 400 mV- 55 C+ 150 C380 mWSmd/SmtX1 - DFN1006 - 2ReelSi1 Channel12 V930 pCEnhancement  
DMP2045UQ-7


MOSFET MOSFET BVDSS: 8V 24V SOT23 T&R 3K
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Diodes Incorporated Availability : 102894
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USD 0.0935

Multiples of: 1

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NTS2101PT1G


MOSFET -8V -1.4A P-Channel
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ON Semiconductor Availability : 102422
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USD 0.0455

Multiples of: 10

1.4 A8 V100 mOhmsP - Channel 450 mV- 55 C+ 150 C290 mWSmd/SmtSOT - 323ReelSi1 Channel4.5 V6.4 nCEnhancement  
DMC2700UDM-7


MOSFET MOSFET BVDSS
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Diodes Incorporated Availability : 102250
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USD 0.0594

Multiples of: 1

1.34 A , 1.14 A20 V700 mOhms , 1.3 OhmsN - Channel, P - Channel 1 V- 55 C+ 150 C1.12 WSmd/SmtSOT - 26 - 6Cut TapeSi2 Channel6 V736.6 pCEnhancement  
BSS123L


Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.36W; SOT23
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ON Semiconductor Availability : 101850
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USD 0.032

Multiples of: 3000

                   
SI3483CDV-T1-GE3


MOSFET -30V Vds 20V Vgs TSOP-6
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Vishay Availability : 101850
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USD 0.1375

Multiples of: 3000

8 A30 V34 mOhmsP - Channel 1 V- 55 C+ 150 C4.2 WSmd/SmtTSOP - 6Cut TapeSi1 Channel10 V22 nCEnhancement Trenchfet
SI2328DS-T1-E3


MOSFET 100V Vds 20V Vgs SOT-23
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Vishay Availability : 101850
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USD 0.1725

Multiples of: 3000

   N - Channel  - 55 C+ 150 C Smd/SmtTO - 236 - 3Reel       
NTZD3152PT1H


ON Semiconductor MOSFET PFET SOT563 20V 430MA TR
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ON Semiconductor Availability : 101268
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USD 0.1024

Multiples of: 1

- 430 mA- 20 V900 mOhmsp - channel     smd/smtSOT - 563 - 6Reelsi2 channel     
DMN2600UFB-7


MOSFET N Trench 25V 1.3A 1V @ 250uA 350 mΩ @ 200mA,4.5V X1-DFN1006-3 RoHS
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Diodes Incorporated Availability : 101115
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USD 0.0374

Multiples of: 1

1.3 A25 V600 mOhmsN - Channel     Smd/SmtDFN - 1006 - 3Reel       
Si1467DH-T1-E3


MOSFET 20V 2.7A 2.78W 90mohm @ 4.5V
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Vishay Availability : 100249
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USD 0.2499

Multiples of: 1

2.7 A- 20 V150 mOhmsP - Channel  - 55 C+ 150 C2.78 WSmd/SmtSOT - 363 - 6ReelSi1 Channel8 V9 nCEnhancement Trenchfet
SI6968BEDQ-T1-E3


20V 5.2A 22mO@4.5V,6.5A 1W 2PCSNChannel(Common Drain) TSSOP-8 MOSFETs ROHS
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Vishay Availability : 100182
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USD 0.4631

Multiples of: 1

   N - Channel  - 55 C+ 150 C Smd/SmtTSSOP - 8ReelSi     Trenchfet
2N7002W


60V 115mA 5@10V,0.5A 200mW 2.5V@250uA 1PCSNChannel SOT-323 MOSFETs ROHS
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hongjiacheng Availability : 99522
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USD 0.0106

Multiples of: 50

                   
BSS84


MOSFET P Trench 50V 130mA 2V @ 1mA 10 Ω @ 100mA,5V SOT-23 (SOT-23-3) RoHS
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Changjing Electronics Technology Availability : 99269
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USD 0.0124

Multiples of: 20

                   
SI1427EDH-T1-BE3


P-Channel 20V 2A (Ta), 2A (Tc) 1.56W (Ta), 2.8W (Tc) Surface Mount SC-70-6
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Vishay Availability : 99195
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USD 0.1

Multiples of: 1

2 A20 V165 mOhmsP - Channel 1 V- 55 C+ 150 C1.56 WSMD/SMTSOT - 363 - 6Cut Tape , ReelSi1 Channel- 8 V , + 8 V21 nCEnhancement TrenchFET
SI3407DV-T1-BE3


MOSFET 20V P-CHANNEL
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Vishay Availability : 98925
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USD 0.1987

Multiples of: 1

8 A20 V32.7 mOhmsP - Channel 1.5 V- 55 C+ 150 C4.2 WSMD/SMTTSOP - 6Reel , Cut TapeSi1 Channel- 12 V , + 12 V21 nCEnhancement  
NVA4001NT1G


ON Semiconductor MOSFET
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ON Semiconductor Availability : 97000
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USD 0.0347

Multiples of: 1

238 mA20 V1.5 OhmsN - Channel 1 V- 55 C+ 150 C300 mWSmd/SmtSC - 75 - 3ReelSi1 Channel10 V  Aec - Q101 
PMV48XPA2R


MOSFET PMV48XPA2R
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Nexperia Availability : 0
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USD 0.0836

Multiples of: 1

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