About MOSFETs

MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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  Vds - Drain-source Breakdown Voltage
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  Rds On - Drain-source Resistance
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  Transistor Polarity
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Pd - Power Dissipation
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  Qg - Gate Charge
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Image  Information Image Stock Code(▲▼)Description
Manufacturer
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRLML0040TRPBF


Transistor: N-MOSFET; unipolar; 40V; 3.6A; 1.3W; SOT23
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Infineon Availability : 93120
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USD 0.07

Multiples of: 3000

3.6 A40 V78 mOhmsN - Channel 1 V- 55 C+ 150 C1.3 WSmd/SmtSOT - 23ReelSi1 Channel10 V2.6 nCEnhancement  
STR2P3LLH6


STMicroelectronics MOSFET
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STMicroelectronics Availability : 93120
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USD 0.1616

Multiples of: 3000

2 A30 V56 mOhmsP - Channel 1 V- 55 C+ 150 C350 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel- 10 V6 nCEnhancement Stripfet
NTLGD3502NT2G


Trans MOSFET N-CH 20V 4.3A 6-Pin DFN T/R
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ON Semiconductor Availability : 93120
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USD 0.5375

Multiples of: 1

4.3 A20 V60 mOhmsn - channel  - 55 C+ 150 C1.74 Wsmd/smtDFN - 6Cut Tapesi2 channel20 V enhancement  
RZR020P01TL


ROHM Semiconductor MOSFET 1.5V DRVE PCH MOSFET
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ROHM Availability : 92942
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USD 0.1849

Multiples of: 1

2 A- 12 V75 mOhmsP - Channel10 V - 55 C+ 150 C1 WSmd/SmtT SMT - 3ReelSi1 Channel10 V6.5 nCEnhancement  
SI2304DDS-T1-BE3


MOSFET N-CHANNEL 30 V D-S
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Vishay Availability : 92790
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USD 0.0957

Multiples of: 1

           Cut Tape       
SI2309


MOSFET P Trench 60V 2A 2.5V @ 250uA 300 mΩ @ 1A,4.5V SOT-23 RoHS
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Bourne Availability : 92596
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USD 0.0371

Multiples of: 10

                   
SPD08P06PGBTMA1


Infineon Technologies MOSFET P-Ch -60V -8.8A DPAK-2
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Infineon Availability : 91946
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USD 0.2728

Multiples of: 1

8.83 A60 V230 mOhmsP - Channel 4 V- 55 C+ 175 C42 WSmd/SmtTO - 252 - 3ReelSi1 Channel20 V- 13 nCEnhancementAec - Q101 
AO3401


30V 4.4A 1PCSPChannel SOT-23 MOSFETs ROHS
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FOSAN Availability : 91917
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USD 0.0158

Multiples of: 20

                   
SQ2303ES-T1_BE3


MOSFET P-CHANNEL 30V D-S
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Vishay Availability : 91331
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USD 0.1679

Multiples of: 1

2.5 A30 V170 mOhmsP - Channel 2.5 V- 55 C+ 175 C1.9 WSMD/SMTSOT - 23 - 3Trenchfet , Cut Tape , Reel , ReelSi1 Channel- 10 V , + 10 V4.5 nCEnhancement TrenchFET
DMP3099LQ-7


MOSFET MOSFET BVDSS: 25V-30V
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Diodes Incorporated Availability : 90613
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USD 0.0451

Multiples of: 1

3.8 A30 V65 mOhmsP - Channel 2.1 V- 55 C+ 150 C1.08 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel20 V11 nCEnhancementAec - Q101 
FSS2301S A1SHB


20V 2.3A 700mW 90mΩ@4.5V,1.5A 0.62V@250uA P Channel 200pF@10V +150℃@(Tj) SOT-23 MOSFETs ROHS
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FOSAN Availability : 90485
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USD 0.0081

Multiples of: 50

                   
2N7002DW


MOSFET N-Chan Enhancement Mode Field Effect
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ON Semiconductor Availability : 90210
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USD 0.0725

Multiples of: 3000

115 mA60 V7.5 OhmsN - Channel  - 55 C+ 150 C200 mWSmd/SmtSC - 70 - 6ReelSi2 Channel20 V Enhancement  
FDC3601N


MOSFET Dual N-Ch 100V Spec Power Trench
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ON Semiconductor Availability : 90210
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USD 0.2313

Multiples of: 3000

1 A100 V500 mOhmsN - Channel  - 55 C+ 150 C960 mWSmd/SmtSSOT - 6ReelSi2 Channel20 V Enhancement Powertrench
BLM3401


MOSFET P Trench 30V 4.2A 1.3V @ 250uA 55 mΩ @ 4.2A,10V SOT-23 (SOT-23-3) RoHS
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Belling Availability : 90051
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USD 0.0363

Multiples of: 10

                   
NTMFS6B05NT1G


ON Semiconductor MOSFET NFET SO8FL 100V 104A 7.7M
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ON Semiconductor Availability : 89725
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USD 3.1875

Multiples of: 1

104 A100 V6.5 mOhmsn - channel 2 V- 55 C+ 150 C138 Wsmd/smtSO - 8FLReelsi1 channel20 V44 nCenhancement  
SL2301S


MOSFET P Channel 20V 2.4A 1.5V @ 250uA 140mO @ 2.4A,4.5V SOT-23 RoHS
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SLKORMICRO Availability : 89626
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USD 0.0077

Multiples of: 50

                   
SIR826LDP-T1-RE3


MOSFET 80V N-CHANNEL D-S
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Vishay Availability : 89493
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USD 0.651

Multiples of: 1

86 A80 V4.15 mOhmsN - Channel 2.4 V- 55 C+ 150 C83 WSMD/SMTPOWERPAK - SO - 8Trenchfet , Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V60.5 nCEnhancement TrenchFET
AO3407


MOSFET SOT23 RoHS
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TWGMC Availability : 89113
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USD 0.0234

Multiples of: 10

                   
NTR5198NLT1G


MOSFET Pwr MOSFET 60V 2.2A 155mOhm SGL N-CH
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ON Semiconductor Availability : 87300
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USD 0.0667

Multiples of: 3000

2.2 A60 V142 mOhmsN - Channel20 V2.5 V  1.5 WSmd/SmtSOT - 23 - 3Reel   5.1 nC   
PMV250EPEAR


MOSFET 40V P-channel Trench MOSFET
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Nexperia Availability : 2038
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USD 0.0583

Multiples of: 1

1.5 A40 V240 mOhmsP - Channel 1 V- 55 C+ 150 C890 mWSmd/SmtTO - 236AB - 3Cut TapeSi1 Channel10 V4.7 nCEnhancement  
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