SPD08P06PGBTMA1 Infineon

SPD08P06PGBTMA1 electronic component of Infineon
SPD08P06PGBTMA1 Infineon
SPD08P06PGBTMA1 MOSFETs
SPD08P06PGBTMA1  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of SPD08P06PGBTMA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SPD08P06PGBTMA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. SPD08P06PGBTMA1
Manufacturer: Infineon
Category: MOSFETs
Description: Infineon Technologies MOSFET P-Ch -60V -8.8A DPAK-2
Datasheet: SPD08P06PGBTMA1 Datasheet (PDF)
Price (USD)
1: USD 0.5187 ea
Line Total: USD 0.52 
Availability : 90491
  
Ship by Mon. 10 Nov to Wed. 12 Nov
QtyUnit Price
1$ 0.5187
10$ 0.49
100$ 0.3586
500$ 0.2915
1000$ 0.2849
2500$ 0.2838
25000$ 0.2728

Availability 90491
Ship by Mon. 10 Nov to Wed. 12 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.5187
10$ 0.49
100$ 0.3586
500$ 0.2915
1000$ 0.2849
2500$ 0.2838
25000$ 0.2728


Availability 286150
Ship by Wed. 12 Nov to Tue. 18 Nov
MOQ : 2500
Multiples : 2500
QtyUnit Price
2500$ 0.326


Availability 4778
Ship by Wed. 12 Nov to Tue. 18 Nov
MOQ : 435
Multiples : 1
QtyUnit Price
435$ 0.5986
453$ 0.5746
500$ 0.554
1000$ 0.5153
2500$ 0.5


Availability 2405
Ship by Wed. 12 Nov to Tue. 18 Nov
MOQ : 646
Multiples : 1
QtyUnit Price
646$ 0.403
685$ 0.3796
752$ 0.3458
1000$ 0.3445

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Series
Brand
Configuration
Height
Length
Transistor Type
Width
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SPD08P06PGBTMA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SPD08P06PGBTMA1 and other electronic components in the MOSFETs category and beyond.

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SPD08P06P G SIPMOS Power-Transistor Product Summary Features V -60 V DS P-Channel R 0.3 DS(on),max Enhancement mode I -8.8 A D Avalanche rated dv /dt rated PG-TO252-3 175C operating temperature Pb-free lead finishing RoHS compliant Qualified according to AEC Q101 Type Package Tape and reel information Marking Lead free Packing SPD08P06PG PG-TO252-3 1000 pcs / reel 08P06P Yes Parameter Symbol Conditions Value Unit steady state I T =25 C Continuous drain current -8.83 A D A T =100 C -6.25 A I T =25 C Pulsed drain current -35.32 D,pulse A Avalanche energy, single pulse E I =8.83 A, R =25 70 mJ AS D GS Avalanche energy, periodic limited by E 4.2 AR T jmax I =8.83 A, V =48 V, D DS Reverse diode dv /dt dv /dt di /dt =-200 A/s, -6 kV/s T =175 C j,max V 20 Gate source voltage V GS Power dissipation P T =25 C 42 W tot A T , T-55 ... +175 Operating and storage temperature C j stg ESD class 260 C Soldering temperature IEC climatic category DIN IEC 68-1 55/175/56 Rev 1.92 page 1 2012-09-10SPD08P06P G G Parameter Symbol Conditions Unit Values min. typ. max. Thermal characteristics Thermal resistance, R - - K/W thJC junction - case Thermal resistance, R - - - thJA junction - ambient,leaded R SMD version, device on PCB: minimal footprint - - 75 K/W thJA 2 1) 6 cm cooling area - - 70 Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0 V, I =-250 A Drain-source breakdown voltage -60 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =-250 A -2.1 -3.0 -4 GS(th) DS GS D V =-60 V, V =0 V, DS GS I Zero gate voltage drain current - -0.1 -1 A DSS T =25 C j V =-60 V, V =0 V, DS GS - -10 -100 T =150 C j Gate-source leakage current I V =-20 V, V =0 V - -10 -100 nA GSS GS DS R V =-6.2 V, I =-10 A Drain-source on-state resistance - 230 300 m DS(on) GS D V >2 I R , DS D DS(on)max g Transconductance 2.5 4.9 - S fs I =-6.2 A D 1) 2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm ( one layer, 70, thick) copper area for drain connection. PCB is vertical without blown air . Rev 1.9 2 page 2 2012-09-10

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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