About MOSFETs

MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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  Id - Continuous Drain Current
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  Vds - Drain-source Breakdown Voltage
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  Rds On - Drain-source Resistance
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  Transistor Polarity
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Pd - Power Dissipation
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  Number Of Channels
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  Vgs - Gate-source Voltage
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  Qg - Gate Charge
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AP5N10S


100V 5A 115mΩ@10V,3A 5W N Channel SOT-23-3L MOSFETs ROHS
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Quan Li Availability : 59593
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USD 0.0597

Multiples of: 10

                   
BSS123


100V 200mA 3.5Ω@10V null SOT-23 MOSFETs ROHS
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Microdiode Electronics Availability : 59218
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USD 0.0086

Multiples of: 50

                   
AO3401A


30V 4.2A 60mΩ@10V,4.2A 1.2W 1.3V@250uA 85pF@15V P Channel 1050pF@15V +150℃@(Tj) SOT-23 MOSFETs ROHS
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GOODWORK Availability : 59092
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USD 0.021

Multiples of: 20

                   
SPD18P06PGBTMA1


MOSFET P-Ch -60V -18.6A DPAK-2
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Infineon Availability : 58975
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USD 0.4433

Multiples of: 1

18.6 A60 V100 mOhmsP - Channel 4 V- 55 C+ 175 C80 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V33 nCEnhancement  
CJ2302 S2


MOSFET N Trench 20V 2.1A 1.2V @ 50uA 60 mΩ @ 3.6A,4.5V SOT-23 (SOT-23-3) RoHS
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Changjing Electronics Technology Availability : 58844
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USD 0.0187

Multiples of: 20

                   
SI1967DH-T1-BE3


Mosfet Array 2 P-Channel (Dual) 20V 1A (Ta), 1.3A (Tc) 740mW (Ta), 1.25W (Tc) Surface Mount SC-70-6
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Vishay Availability : 58457
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USD 0.1287

Multiples of: 1

          6 - TSSOP , SC - 88 , SOT - 363Digi - Reel®       
BSS138


SOT-23 MOSFETs ROHS
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JSMSEMI Availability : 58248
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USD 0.0062

Multiples of: 50

                   
DMN67D8L-7


60V 210mA 340mW 5O@10V,500mA N Channel SOT-23 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated Availability : 58200
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USD 0.02

Multiples of: 3000

210 mA60 V1.5 OhmsN - Channel 1 V- 55 C+ 150 C340 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel+/- 30 V821 pCEnhancement  
DMP2240UWQ-7


Diodes Incorporated MOSFET P-Ch Enh Mode FET VDSS -20V -12VGSS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated Availability : 58200
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USD 0.0902

Multiples of: 3000

- 1.5 A- 20 V134 mOhmsP - Channel - 1 V- 55 C+ 150 C250 mWSmd/SmtSOT - 323 - 3ReelSi1 Channel12 V EnhancementAec - Q101 
MCH6422-TL-E


MCH6422-TL-E
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ON Semiconductor Availability : 58200
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USD 0.128

Multiples of: 1

                   
SI3993CDV-T1-GE3


MOSFET 20V 2.2A DUAL PCH
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Vishay Availability : 58200
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USD 0.215

Multiples of: 3000

2.2 A- 30 V133 mOhmsP - Channel20 V- 3 V- 55 C+ 150 C1.15 WSmd/SmtTSOP - 6ReelSi  3.1 nCEnhancement Trenchfet
SQJ457EP-T1_GE3


MOSFET P Ch -60Vds 20Vgs AEC-Q101 Qualified
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Vishay Availability : 58200
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USD 0.3725

Multiples of: 3000

- 36 A- 60 V21 mOhmsP - Channel - 2.5 V- 55 C+ 175 C68 WSmd/SmtPOWERPAK - SO - 8L - 4Cut TapeSi1 Channel20 V100 nCEnhancementAec - Q101Trenchfet
STD15P6F6AG


null 10A 160mO@5A,10V 35W P Channel TO-252 MOSFETs ROHS
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STMicroelectronics Availability : 58200
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USD 0.4028

Multiples of: 2500

- 10 A- 60 V0.13 OhmsP - Channel - 2 V-+ 175 C35 WSmd/SmtTO - 252 - 3ReelSi1 Channel+/- 20 V6.4 nCEnhancementAec - Q101Stripfet
BSC010N04LSATMA1


Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8
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Infineon Availability : 58200
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USD 0.6502

Multiples of: 5000

            Optimos      
STD25NF10LT4


Transistor: N-MOSFET; unipolar; 100V; 25A; 100W; DPAK
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STMicroelectronics Availability : 58200
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USD 0.9941

Multiples of: 2500

            Supermesh      
STD20NF06T4


Transistor: N-MOSFET; unipolar; 60V; 24A; 60W; DPAK
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STMicroelectronics Availability : 53350
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USD 0.4569

Multiples of: 2500

            Supermesh      
2N7002L


Fairchild Semiconductor MOSFET
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ON Semiconductor Availability : 29100
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USD 0.031

Multiples of: 3000

115 mA60 V7.5 OhmsN - Channel20 V1.81 V- 55 C+ 150 C200 mWSmd/SmtSOT - 23 - 3Reel    Enhancement  
BUK6D43-60EX


MOSFET BUK6D43-60E/SOT1220 SOT1220
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Nexperia Availability : 2332
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USD 0.1494

Multiples of: 5

13 A60 V43 mOhmsN - Channel 1.3 V- 55 C+ 175 C15 WSmd/SmtDfn2020md - 6 Si1 Channel20 V18 nCEnhancement  
STN3N40K3


Transistor: N-MOSFET; unipolar; 400V; 1A; 3.3W; SOT223
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics Availability : 1004
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USD 0.2403

Multiples of: 1

            Supermesh      
2N7002BKV,115


MOSFET Dual N-Channel 60V 340mA
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Nexperia Availability : 0
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USD 0.0653

Multiples of: 4000

340 mA60 V1.6 OhmsN - Channel 1.1 V- 55 C+ 150 C0.525 WSmd/SmtSOT - 666 - 6ReelSi2 Channel10 V0.5 nCEnhancement  
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