About MOSFETs

MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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  Rds On - Drain-source Resistance
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  Transistor Polarity
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Pd - Power Dissipation
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Image  Information Image Stock Code(▲▼)Description
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NTLJS4114NTAG


MOSFET NFET WDFN6 30V 7.8A
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ON Semiconductor Availability : 54275
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USD 0.3004

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           Cut TapeSi      
DMN3042L-13


MOSFET 30V N-Ch Enh Mode 26.5mOhm 12Vgs 570pF
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Diodes Incorporated Availability : 53738
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USD 0.0737

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5.8 A30 V21 mOhmsN - Channel 600 mV- 55 C+ 150 C720 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel+/- 12 V20 nCEnhancement  
2SK3018


MOSFET N Trench 30V 100mA 1.5V @ 100uA 8 Ω @ 10mA,4V SOT-323 (SC-70) RoHS
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Changjing Electronics Technology Availability : 53621
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USD 0.0135

Multiples of: 20

                   
2N7000TA


Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 Ammo
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Samsung Availability : 53398
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USD 0.0808

Multiples of: 1

                   
IPA50R199CPXKSA1


Transistor: N-MOSFET; unipolar; 500V; 17A; 139W; TO220FP
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Infineon Availability : 52865
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USD 2.0781

Multiples of: 1

            coolmos      
2N7002


Junction Field-Effect Transistor,JFET SOT23 RoHS
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TWGMC Availability : 52719
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USD 0.0077

Multiples of: 50

                   
BSC146N10LS5ATMA1


MOSFET TRENCH >=100V
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Infineon Availability : 52545
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USD 0.5974

Multiples of: 1

           Cut Tape       
BSS138-G


MOSFET FET 50V 3.5 OHM
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ON Semiconductor Availability : 52380
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USD 0.0925

Multiples of: 3000

           Cut Tape       
ZXMN2A14FTA


null 3.4A 60mO@3.4A,4.5V 1W null SOT-23 MOSFETs ROHS
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Diodes Incorporated Availability : 52124
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USD 0.1958

Multiples of: 1

4.1 A20 V110 mOhmsN - Channel  - 55 C+ 150 C1 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel12 V Enhancement  
DMN65D8LQ-13


MOSFET MOSFET BVDSS
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Diodes Incorporated Availability : 52027
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USD 0.0231

Multiples of: 1

         Smd/SmtSOT - 23 - 3Cut TapeSi    Aec - Q101 
2N7002LT3G


MOSFET 60V 115mA N-Channel
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ON Semiconductor Availability : 51701
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USD 0.0216

Multiples of: 1

   N - Channel  - 55 C+ 150 C Smd/SmtSOT - 23Reel       
AO3401A


SOT23 MOSFETs ROHS
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TECH PUBLIC Availability : 51507
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USD 0.0201

Multiples of: 20

                   
BST82.215


Transistor: N-MOSFET; unipolar; 100V; 0.19A; 830mW; SOT23
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Nexperia Availability : 51456
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USD 0.217

Multiples of: 1

                   
L2N7002SLT1G


MOSFET N Trench 60V 320mA 2V @ 250uA 2.8 Ω @ 500mA,10V SOT-23 RoHS
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Leshan Availability : 50972
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USD 0.0101

Multiples of: 50

                   
SI2309A


SOT-23 MOSFETs ROHS
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Youtai Availability : 50934
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USD 0.0236

Multiples of: 10

                   
BSS119NH6327XTSA1


Transistor: N-MOSFET; unipolar; 100V; 0.19A; 0.5W; SOT23
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Infineon Availability : 50834
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USD 0.0374

Multiples of: 1

            Sipmos      
FDB0170N607L


MOSFET 60V TO263 7L JEDEC GREEN EMC
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ON Semiconductor Availability : 46560
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USD 2.491

Multiples of: 800

300 A60 V3.5 mOhmsN - Channel 2 V- 55 C+ 175 C3.8 WSmd/SmtTO - 263 - 7ReelSi1 Channel+/- 20 V173 nCEnhancement  
SIR186LDP-T1-RE3


MOSFET N-CHANNEL 60-V (D-S)
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Vishay Availability : 45590
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USD 0.4037

Multiples of: 1

80.3 A60 V4.4 mOhmsN - Channel 2.5 V- 55 C+ 150 C57 WSMD/SMTPOWERPAK SO - 8Cut Tape , ReelSi1 Channel- 20 V , + 20 V31.5 nCEnhancement TrenchFET
PSMN026-80YS,115


MOSFET N-CH 80V 27.5 mOhm Standard MOSFET
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Nexperia Availability : 0
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USD 0.3001

Multiples of: 1

34 A80 V27.5 mOhmsN - Channel    74 WSmd/SmtSOT - 669 (LFPAK)ReelSi1 Channel     
PSMN4R0-40YS,115


NXP Semiconductors MOSFET N-CH 40V 4.2 mOhm Standard MOSFET
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Nexperia Availability : 0
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USD 0.4358

Multiples of: 1

100 A40 V4 mOhmsN - Channel    106 WSmd/SmtLFPAK - 4ReelSi1 Channel     
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