PSMN4R0-40YS,115 Nexperia

PSMN4R0-40YS,115 electronic component of Nexperia
PSMN4R0-40YS,115 Nexperia
PSMN4R0-40YS,115 MOSFETs
PSMN4R0-40YS,115  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of PSMN4R0-40YS,115 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PSMN4R0-40YS,115 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. PSMN4R0-40YS,115
Manufacturer: Nexperia
Category: MOSFETs
Description: NXP Semiconductors MOSFET N-CH 40V 4.2 mOhm Standard MOSFET
Datasheet: PSMN4R0-40YS,115 Datasheet (PDF)
Price (USD)
1: USD 1.0038 ea
Line Total: USD 1 
Availability : 0
  
QtyUnit Price
1$ 1.0038
10$ 0.7413
100$ 0.5181
500$ 0.4983
1000$ 0.4752
1500$ 0.4334
24000$ 0.4268

Availability 0
Ship by Mon. 27 Oct to Fri. 31 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.769
10$ 1.3022
100$ 0.9091
500$ 0.8269
1000$ 0.7702
5000$ 0.7615


Availability 0
Ship by Mon. 27 Oct to Fri. 31 Oct
MOQ : 1500
Multiples : 1500
QtyUnit Price
1500$ 0.2677
3000$ 0.2646
4500$ 0.2614
6000$ 0.2614
7500$ 0.2551


Availability 0
Ship by Mon. 27 Oct to Fri. 31 Oct
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.5013


Availability 0
Ship by Thu. 23 Oct to Mon. 27 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.0038
10$ 0.7413
100$ 0.5181
500$ 0.4983
1000$ 0.4752
1500$ 0.4334
24000$ 0.4268

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
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Technology
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Configuration
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Cnhts
Hts Code
Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PSMN4R0-40YS,115 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN4R0-40YS,115 and other electronic components in the MOSFETs category and beyond.

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PSMN4R0-40YS N-channel LFPAK 40 V 4.2 m standard level MOSFET Rev. 02 12 July 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS provides low Improved mechanical and thermal RDSon and low gate charge characteristics High efficiency gains in switching LFPAK provides maximum power power converters density in a Power SO8 package 1.3 Applications DC-to-DC convertors Motor control Lithium-ion battery protection Server power supplies Load switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source T 25 C T 175C --40 V DS j j voltage I drain current T =25C V =10V --100A D mb GS see Figure 1 P total power T = 25 C see Figure 2 --106W tot mb dissipation T junction -55 - 175 C j temperature Static characteristics R drain-source V =10V I =15A --5.6 m DSon GS D on-state T = 100 C see Figure 12 j resistance V =10V I =15A -3.2 4.2 m GS D T =25C see Figure 12 j see Figure 13PSMN4R0-40YS Nexperia N-channel LFPAK 40 V 4.2 m standard level MOSFET Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Dynamic characteristics Q gate-drain charge V =10V I =25A -7 -nC GD GS D V =20 V see Figure 14 DS Q total gate charge - 38 - nC G(tot) see Figure 15 Avalanche ruggedness E non-repetitive V =10V T =25C --77 mJ DS(AL)S GS j(init) drain-source I =100 A V 40 V D sup avalanche energy unclamped R =50 GS 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source mb D 2S source 3S source G 4 G gate mbb076 S mb D drain 1234 SOT669 (LFPAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN4R0-40YS LFPAK plastic single-ended surface-mounted package (LFPAK) 4 leads SOT669 PSMN4R0-40YS All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 02 12 July 2010 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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