X-On Electronics has gained recognition as a prominent supplier of DMN1260UFA-7B MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMN1260UFA-7B MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

DMN1260UFA-7B Diodes Incorporated

DMN1260UFA-7B electronic component of Diodes Incorporated
DMN1260UFA-7B Diodes Incorporated
DMN1260UFA-7B MOSFETs
DMN1260UFA-7B  Semiconductors

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See Product Specifications
Part No. DMN1260UFA-7B
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: Diodes Incorporated MOSFET 12V N-Ch Enh FET 8 VGS 60pF 0.92nC
Datasheet: DMN1260UFA-7B Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3602 ea
Line Total: USD 0.36 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 05 Jun to Wed. 11 Jun
MOQ : 10000
Multiples : 10000
10000 : USD 0.0478

0
Ship by Thu. 12 Jun to Tue. 17 Jun
MOQ : 5
Multiples : 5
5 : USD 0.4831
50 : USD 0.3903
150 : USD 0.3498
500 : USD 0.2996
2500 : USD 0.2763
5000 : USD 0.2628

0
Ship by Tue. 03 Jun to Thu. 05 Jun
MOQ : 1
Multiples : 1
1 : USD 0.3602
10 : USD 0.2143
100 : USD 0.088
500 : USD 0.0716
1000 : USD 0.0648
5000 : USD 0.0625
10000 : USD 0.0534
20000 : USD 0.0523

0
Ship by Thu. 05 Jun to Wed. 11 Jun
MOQ : 10000
Multiples : 10000
10000 : USD 0.0636
20000 : USD 0.0607
30000 : USD 0.06
50000 : USD 0.055
70000 : USD 0.0544

0
Ship by Thu. 05 Jun to Wed. 11 Jun
MOQ : 10000
Multiples : 10000
10000 : USD 0.0636
20000 : USD 0.0607
30000 : USD 0.06
50000 : USD 0.055
70000 : USD 0.0544

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Transistor Type
Brand
Fall Time
Rise Time
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DMN1260UFA-7B from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMN1260UFA-7B and other electronic components in the MOSFETs category and beyond.

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DMN1260UFA 12V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 0.4mm Ultra Low Profile Package for Thin Application ID MAX V R 2 (BR)DSS DS(ON) max 0.48mm Package Footprint, 16 Times Smaller than SOT23 T = +25C A 366m V = 4.5V Low On-Resistance GS 520m V = 2.5V GS Low Input Capacitance 12V 0.5A 950m V = 1.8V GS ESD Protected Gate 1500m V =1.5V GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description Mechanical Data This MOSFET is designed to minimize the on-state resistance (R ) and yet maintain superior switching performance, making it DS(ON) Case: X2-DFN0806-3 ideal for high efficiency power management applications. Case Material: Molded Plastic, Green Molding Compound UL Flammability Classification Rating 94V-0 Applications Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish NiPdAu over Copper Leadframe. Solderable Load Switch per MIL-STD-202, Method 208 e4 Power Management Functions Weight: 0.00043 grams (Approximate) Portable Power Adaptors D X2-DFN0806-3 G Gate Protection S Diode Top View Bottom View Internal Schematic Package Pin Configuration Ordering Information (Note 4) Part Number Case Packaging DMN1260UFA-7B X2-DFN0806-3 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN1260UFA Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 12 DSS V Gate-Source Voltage V 8 GSS Continuous Drain Current (Note 5) I 0.5 A D Pulsed Drain Current (Note 6) 1.5 A I DM Thermal Characteristics Characteristic Symbol Value Units Total Power Dissipation (Note 5) P 0.36 W D Thermal Resistance, Junction to Ambient (Note 5) 353 C/W R JA Operating and Storage Temperature Range T T -55 to 150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 12 V BV V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current T = +25C 1 A J I V = 10V, V = 0V DSS DS GS Gate-Source Leakage I 10 A V = 8V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 0.4 1.0 V V = V , I = 250A GS(th) DS GS D 150 366 V = 4.5V, I = 200mA GS D 200 520 V = 2.5V, I = 100mA GS D Static Drain-Source On-Resistance m R DS(ON) 260 950 V = 1.8V, I = 50mA GS D 350 1500 V = 1.5V, I = 10mA GS D Diode Forward Voltage V 1.2 V V = 0V, I = 0.2A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 60 pF C iss V = 10V, V = 0V, DS GS Output Capacitance 13.8 pF C oss f = 1MHz Reverse Transfer Capacitance 12.1 pF C rss Total Gate Charge 0.96 nC Q g 0.09 Gate-Source Charge Q nC V = 6V, V = 4.5V, I = 0.2A gs DS GS D 0.10 Gate-Drain Charge Q nC gd 7.4 Turn-On Delay Time t ns D(on) 18.8 Turn-On Rise Time t ns r V = 6V, V = 4.5V, DD GS 106.5 I = 0.2A, R = 6 Turn-Off Delay Time t ns D G D(off) 59.2 Turn-Off Fall Time t ns f Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Device mounted on minimum recommended pad layout test board, 10s pulse duty cycle = 1%. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 6 DMN1260UFA February 2015 Diodes Incorporated www.diodes.com Document number: DS37122 Rev. 3 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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