Product Information

LGE2300

LGE2300 electronic component of Luguang

Datasheet
Transistor: N-MOSFET; unipolar; 20V; 4A; 1.25W; SOT23

Manufacturer: Luguang
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

20: USD 0.0585 ea
Line Total: USD 1.17

0 - Global Stock
MOQ: 20  Multiples: 20
Pack Size: 20
Availability Price Quantity
0 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 20
Multiples : 20

Stock Image

LGE2300
Luguang

20 : USD 0.0559
100 : USD 0.0507
400 : USD 0.0416
1080 : USD 0.039
12000 : USD 0.0377

     
Manufacturer
Product Category
Case
Mounting
Kind Of Package
Kind Of Channel
Polarisation
Type Of Transistor
Drain-Source Voltage
Drain Current
On-State Resistance
Gate-Source Voltage
Gate Charge
Power Dissipation
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project Luguang Electric Company’s (LGE) 2,300 MW hydroelectric power station is a major component of the company’s strategy to supply China with clean renewable electricity. Located on the Nanpan River in Yunnan province, the LGE2300 project was completed in 2017 after 6 years of construction. The project includes a total of 10 generating units totaling 2,300 megawatts of installed capacity, along with a 132 kV GTP transmission line, transformer substations, and switchyards. The project also includes an access road, a powerhouse and other necessary infrastructure. In addition to supplying electricity to the southern grid, LGE plans to install a pumped storage component to this power station, allowing it to provide ancillary services such as frequency regulation, load balancing and black start capabilities, making it an ideal component of the energy network. LGE 2300 has been praised by the Chinese government for its commitment to low-carbon energy production and its advanced technological innovation, describing it as the “flagship of the nation’s hydropower development”.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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