2N7002E-7-F Diodes Incorporated

2N7002E-7-F electronic component of Diodes Incorporated
2N7002E-7-F Diodes Incorporated
2N7002E-7-F MOSFETs
2N7002E-7-F  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of 2N7002E-7-F MOSFETs across the USA, India, Europe, Australia, and various other global locations. 2N7002E-7-F MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. 2N7002E-7-F
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: 60V 250mA 3O@10V,250mA 370mW N Channel SOT-23 MOSFETs ROHS
Small-signal, surface-mount MOSFET transistor with high-speed switching capabilities.
Datasheet: 2N7002E-7-F Datasheet (PDF)
Price (USD)
12000: USD 0.0246 ea
Line Total: USD 295.2 
Availability : 52380
  
Ship by Tue. 12 Aug to Mon. 18 Aug
QtyUnit Price
12000$ 0.0246
15000$ 0.0243
45000$ 0.0229
75000$ 0.0224

Availability 6229
Ship by Fri. 08 Aug to Tue. 12 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.2375
10$ 0.1237
100$ 0.0663
1000$ 0.0561
3000$ 0.0407
6000$ 0.0385
9000$ 0.033


Availability 4767
Ship by Fri. 08 Aug to Tue. 12 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.238
5$ 0.1904
10$ 0.1554
50$ 0.0868
100$ 0.0686


Availability 12949
Ship by Tue. 19 Aug to Fri. 22 Aug
MOQ : 10
Multiples : 10
QtyUnit Price
10$ 0.0714
100$ 0.0564
300$ 0.0488
3000$ 0.0292
6000$ 0.0262
9000$ 0.0246


Availability 52380
Ship by Tue. 12 Aug to Mon. 18 Aug
MOQ : 12000
Multiples : 3000
QtyUnit Price
12000$ 0.0246
15000$ 0.0243
45000$ 0.0229
75000$ 0.0224


Availability 2290170
Ship by Tue. 12 Aug to Mon. 18 Aug
MOQ : 9000
Multiples : 3000
QtyUnit Price
9000$ 0.0364

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Height
Length
Product
Series
Transistor Type
Width
Brand
Forward Transconductance - Min
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Brand Category
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2N7002E-7-F from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N7002E-7-F and other electronic components in the MOSFETs category and beyond.

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1. The 2N7002E-7-F is a transistor produced by Diodes Incorporated. It is a general-purpose N-Channel Enhancement Mode Field Effect Transistor (FET). 2. This device has a low-on resistance of 6.0ohm and a low drain to source breakdown voltage of 7V. It is suitable for use in a variety of applications such as switching, level shifting, and small signal amplification. It is housed in a small SOT-23 surface-mount package and is lead-free and RoHS compliant.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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