CMPDM7003 SURFACE MOUNT www.centralsemi.com N-CHANNEL DESCRIPTION: ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CMPDM7003 is SILICON MOSFET an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers low r DS(ON) and ESD protection up to 2kV. MARKING CODE: C7003 FEATURES: SOT-23 CASE ESD protection up to 2kV Low r DS(ON) Low V DS(ON) APPLICATIONS: Load/Power switches Low threshold voltage Power supply converter circuits Fast switching Battery powered portable equipment Logic level compatibility MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Drain-Source Voltage V 50 V DS Drain-Gate Voltage V 50 V DG Gate-Source Voltage V 12 V GS Continuous Drain Current I 280 mA D Maximum Pulsed Drain Current I 1.5 A DM Power Dissipation P 350 mW D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 357 C/W JA ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN TYP MAX UNITS I I V=5.0V 100 nA GSSF, GSSR GS I I V=10V 2.0 A GSSF, GSSR GS I I V=12V 2.0 A GSSF, GSSR GS I V =50V, V=0 50 nA DSS DS GS BV V =0, I=10A 50 V DSS GS D V V =V , I=250A 0.49 1.0 V GS(th) DS GS D V V =0, I=115mA 1.4 V SD GS S r V =1.8V, I=50mA 1.6 3.0 DS(ON) GS D r V =2.5V, I=50mA 1.3 2.5 DS(ON) GS D r V =5.0V, I=50mA 1.1 2.0 DS(ON) GS D g V =10V, I=200mA 200 mS FS DS D C V =25V, V =0, f=1.0MHz 5.0 pF rss DS GS C V =25V, V =0, f=1.0MHz 50 pF iss DS GS C V =25V, V =0, f=1.0MHz 25 pF oss DS GS R1 (27-January 2010)CMPDM7003 SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Gate 2) Source 3) Drain MARKING CODE: C7003 R1 (27-January 2010) www.centralsemi.com