Type BSS131 SIPMOS Small-Signal-Transistor Product Summary Feature V 240 V DS N-Channel R 14 DS(on),max Enhancement mode I 0.1 A D Logic level dv /dt rated Pb-free lead-plating RoHS compliant PG-SOT-23 Qualified according to AEC Q101 Halogen-free according to IEC61249-2-21 Type Package Pb-free Tape and Reel Information Marking BSS131 PG-SOT23 Yes H6327 SRs Parameter Symbol Conditions Value Unit I T =25 C Continuous drain current 0.11 A D A T =70 C 0.09 A Pulsed drain current I T =25 C 0.4 D,pulse A I =0.1 A, V =192 V, D DS Reverse diode dv /dt dv /dt di /dt =200 A/s, 6 kV/s T =150 C j,max V Gate source voltage 20 V GS ESD Class JESD22-A114-HBM Class 0 Power dissipation P T =25 C 0.36 W tot A T , T Operating and storage temperature -55 ... 150 C j stg IEC climatic category DIN IEC 68-1 55/150/56 Rev. 2.6Rev. 2.6 page 1page 1 2012-03-292012-03-29BSS131 Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, R - - 350 K/W thJA junction - minimal footprint Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0 V, I =250 A Drain-source breakdown voltage 240 - - V (BR)DSS GS D Gate threshold voltage V V =0 V, I =56 A 0.8 1.4 1.8 GS(th) DS D V =240 V, V =0 V, DS GS Drain-source leakage current I - - 0.01 A D (off) T =25 C j V =240 V, V =0 V, DS GS -- 5 T =150 C j Gate-source leakage current I V =20 V, V =0 V - - 10 nA GSS GS DS R V =4.5 V, I =0.09 A Drain-source on-state resistance - 9.07 20 DS(on) GS D V =10 V, I =0.1 A - 7.7 14 GS D V >2 I R , DS D DS(on)max g Transconductance 0.06 0.13 - S fs I =0.08 A D Rev. 2.6Rev. 2.6 page 2page 2 2012-03-292012-03-29