About MOSFETs

MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFETs

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  Vds - Drain-source Breakdown Voltage
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  Rds On - Drain-source Resistance
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  Transistor Polarity
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Pd - Power Dissipation
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  Vgs - Gate-source Voltage
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  Qg - Gate Charge
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Image  Information Image Stock Code(▲▼)Description
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SQJ872EP-T1_GE3


MOSFET 150V Vds 20V Vgs PowerPAK SO-8L
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Vishay Availability : 14550
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USD 0.6425

Multiples of: 1

24.5 A150 V35.5 mOhmsN - Channel 2.5 V- 55 C+ 175 C55 WSmd/SmtPOWERPAK - SO - 8L - 4Cut TapeSi1 Channel10 V14 nCEnhancement Powerpak
PSMN1R2-30YLD


MOSFET
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Nexperia Availability : 14550
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USD 0.7126

Multiples of: 1

                   
BSC109N10NS3GATMA1


MOSFET N Trench 100V 63A (Tc) 3.5V @ 45uA 10.9 mΩ @ 46A,10V PG-TDSON-8 RoHS
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Infineon Availability : 14550
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USD 1.1688

Multiples of: 5000

            Optimos 3      
STB100N10F7


MOSFET N-Ch 100V 0.0068 Ohm typ. 80A STripFET
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STMicroelectronics Availability : 14550
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USD 1.3376

Multiples of: 1000

80 A100 V8 mOhmsN - Channel20 V4.5 V- 55 C+ 175 C150 WSmd/SmtD2PAK - 2Reel   61 nC   
SSM3K333R,LF


N-Channel 30 V 6A (Ta) 1W (Ta) Surface Mount SOT-23F
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Toshiba Availability : 14549
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USD 0.085

Multiples of: 1

6 A30 V107 mOhmsN - Channel 1.3 V + 150 C2 WSmd/SmtSOT - 23FReelSi1 Channel10 V3.4 nCEnhancement  
SQ4470EY-T1_BE3


MOSFET N-CHANNEL 60V
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Vishay Availability : 14546
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USD 0.888

Multiples of: 1

16 A60 V10 mOhmsN - Channel 2.5 V- 55 C+ 175 C7.1 WSMD/SMTSO - 8Trenchfet , Cut Tape , ReelSi1 Channel- 20 V , + 20 V68 nCEnhancement TrenchFET
AO6402A(UMW)


SOT-23-6 MOSFETs ROHS
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Youtai Availability : 14545
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USD 0.0505

Multiples of: 5

                   
NTMFS4C029NT3G


MOSFET TRENCH 6 30V NCH
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ON Semiconductor Availability : 14544
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USD 0.6349

Multiples of: 1

           Cut Tape       
BSS138P


50V 300mA 1.5@10V,500mA 300mW 1V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
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ElecSuper Availability : 14540
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USD 0.0067

Multiples of: 10

                   
PMF170XP,115


P-Channel 20 V 1A (Ta) 290mW (Ta), 1.67W (Tc) Surface Mount SOT-323
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Nexperia Availability : 14540
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USD 0.0377

Multiples of: 10

1 A20 V200 mOhmsP - Channel 650 mV- 55 C+ 150 C360 mWSmd/SmtSOT - 323ReelSi1 Channel4.5 V2.6 nCEnhancement  
HL3415A


20V 5.6A 42m@4.5V,5A 1.3W 620mV@250uA 1 Piece P-Channel SOT-23 MOSFETs ROHS
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hongjiacheng Availability : 14536
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USD 0.022

Multiples of: 10

                   
IPG20N06S4L-26A


MOSFET N-Ch 55V 20A TDSON-8
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Infineon Availability : 14536
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USD 0.4692

Multiples of: 1

20 A , 20 A60 v , 60 V21 mOhms , 21 mOhmsN - Channel 1.2 v , 1.2 V- 55 C+ 175 C33 WSmd/SmtTDSON - 8ReelSi2 Channel+/- 16 v , +/- 16 V20 nC , 20 nCEnhancementAec - Q101Optimos
TPNTGD4167CT1G


SOT23-6 MOSFETs ROHS
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TECH PUBLIC Availability : 14535
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USD 0.0738

Multiples of: 5

                   
CMLDM7003TG TR PBFREE


MOSFET Dual N-Ch Enh FET 50Vds 50Vdg 12Vgs
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Central Semiconductor Availability : 14535
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USD 0.143

Multiples of: 1

           Cut Tape       
IPB017N10N5ATMA1


Infineon Technologies MOSFET N-Ch 100V 180A D2PAK-2
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Infineon Availability : 14532
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USD 2.816

Multiples of: 1

180 A100 V2.2 mOhmsN - Channel+/- 20 V2.2 V- 55 C+ 175 C375 WSmd/SmtD2PAK - 7ReelSi1 Channel10 V168 nCEnhancement Optimos
FDN336P


SOT-23 MOSFETs ROHS
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TECH PUBLIC Availability : 14525
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USD 0.03

Multiples of: 10

                   
SQJ858AEP-T1_GE3


N-Channel 40 V 58A (Tc) 48W (Tc) Surface Mount PowerPAK® SO-8
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Vishay Availability : 14524
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USD 0.5875

Multiples of: 1

58 A40 V5 mOhmsN - Channel 1.5 V- 55 C+ 175 C48 WSmd/SmtPOWERPAK - SO - 8L - 4Cut TapeSi1 Channel20 V55 nCEnhancementAec - Q101Trenchfet
IRFRC20TRPBF-BE3


MOSFET 600V N-CH
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Vishay Availability : 14522
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USD 0.7525

Multiples of: 1

2 A600 V4.4 OhmsN - Channel 4 V- 55 C+ 150 C42 WSMD/SMTTO - 252 - 3Cut Tape , ReelSi1 Channel- 20 V , + 20 V18 nCEnhancement  
Hot IPD90N04S403ATMA1


MOSFET N-Ch 40V 90A DPAK-2 OptiMOS-T2
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Infineon Availability : 14496
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USD 0.2789

Multiples of: 1

90 A40 V2.7 mOhmsN - Channel 2 V- 55 C+ 175 C94 WSmd/SmtTO - 252 - 3ReelSi1 Channel+/- 20 V66 nCEnhancementAec - Q101 
IRFP250NPBF


MOSFET N Trench 200V 30A 4V @ 250uA 75 mΩ @ 18A,10V TO-247 (AC) RoHS
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Infineon Availability : 14496
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USD 0.4061

Multiples of: 1

   N - Channel  - 55 C+ 175 C Through HoleTO - 247ACTube       
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First...8687888990...

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