About MOSFETs

MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFETs

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  Id - Continuous Drain Current
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  Vds - Drain-source Breakdown Voltage
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  Rds On - Drain-source Resistance
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  Transistor Polarity
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Pd - Power Dissipation
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  Vgs - Gate-source Voltage
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  Qg - Gate Charge
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Image  Information Image Stock Code(▲▼)Description
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SIRA64DP-T1-RE3


MOSFET 30V Vds 20V Vgs PowerPAK SO-8
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Vishay Availability : 13638
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USD 0.3652

Multiples of: 1

60 A30 V1.8 mOhmsN - Channel 1.1 V- 55 C+ 150 C27.8 WSmd/SmtPOWERPAK - SO - 8Cut TapeSi1 Channel20 v , - 16 V65 nCEnhancement Trenchfet
2N7002P.215


MOSFET N Trench 60V 360mA 2.4V @ 250uA 1.6 Ω @ 500mA,10V SOT-23 (SOT-23-3) RoHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Nexperia Availability : 13628
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USD 0.0924

Multiples of: 1

                   
DMC31D5UDJ-7B


MOSFET MOSFET BVDSS: 25V-30V
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Diodes Incorporated Availability : 13624
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USD 0.1485

Multiples of: 1

220 mA , - 200 mA30 V2.3 Ohms , 5.1 OhmsN - Channel, P - Channel 1 V- 55 C+ 150 C350 mWSmd/SmtSOT - 963 - 6ReelSi2 Channel12 V0.38 nC , 0.35 nCEnhancement  
2N7002W


MOSFET MOSFET, SOT-323, 60V, 0.115A, N, 0.2W
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Diotec Availability : 13582
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USD 0.0121

Multiples of: 1

115 mA60 V13.5 OhmsN - Channel 2.5 V + 150 C200 mWSMD/SMTSOT - 323 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V Enhancement 2N7002W
TK7A90E,S4X(S


TO-220SIS MOSFETs ROHS
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Toshiba Availability : 13582
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USD 0.5424

Multiples of: 1

                   
IPD70N03S4L-04


Infineon Technologies MOSFET N-Ch 30V 70A DPAK-2 OptiMOS-T2
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Infineon Availability : 13580
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USD 0.5715

Multiples of: 1

70 A30 V4.3 mOhmsN - Channel16 V1 V- 55 C+ 175 C31 WSmd/SmtDPAK - 3ReelSi1 Channel16 V48 nCEnhancementAec - Q101Optimos
STB120N4F6


STMicroelectronics MOSFET N-Ch 40V 4mOhm 80A STripFET VI DeepGATE
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STMicroelectronics Availability : 13580
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USD 0.961

Multiples of: 1000

80 A40 V4 mOhmsn - channel20 V4 V- 55 C+ 175 C110 Wsmd/smtD2PAK - 3Reel   65 nC   
STP30NF20


Transistor: N-MOSFET; unipolar; 200V; 19A; 125W; TO220-3
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STMicroelectronics Availability : 13580
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USD 0.9815

Multiples of: 1000

                   
IRFB4410ZGPBF


MOSFET MOSFT 100V 97A 9mOhm 83nC
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Infineon Availability : 13580
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USD 1.3079

Multiples of: 1

97 A100 V7.2 mOhmsn - channel    230 Wthrough holeTO - 220 - 3Tubesi1 channel20 V83 nC   
STH320N4F6-6


STMicroelectronics MOSFET N-CH 40V 11mOhm 200A STripFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics Availability : 13580
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USD 2.5863

Multiples of: 1000

200 A40 V1.3 mOhmsn - channel20 V2 V- 55 C+ 175 C300 Wsmd/smtH2PAK - 6Reelsi1 channel20 V240 nCenhancementaec - q101stripfet
STB21N90K5


Transistor: N-MOSFET; unipolar; 900V; 11.6A; 250W; D2PAK
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STMicroelectronics Availability : 13580
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USD 3.8662

Multiples of: 1000

            Supermesh      
TPH1R403NL-HXY


30V 150A 2.4mΩ@10V,30A 2.5V N Channel DFN-8(5x6) MOSFETs ROHS
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HXY MOS Availability : 13578
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USD 0.2173

Multiples of: 1

                   
DMP2104V-7


null 2.1A 150mO@950mA,4.5V 850mW P Channel SOT-563 MOSFETs ROHS
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Diodes Incorporated Availability : 13560
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USD 0.1381

Multiples of: 1

860 mA20 V150 mOhmsP - Channel  - 55 C+ 150 C210 mWSmd/SmtSOT - 563ReelSi1 Channel12 V Enhancement  
SUD35N10-26P-BE3


MOSFET 100V N-CH (D-S)
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Vishay Availability : 13560
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USD 1.1062

Multiples of: 1

35 A100 V26 mOhmsN - Channel 4.4 V- 55 C+ 175 C83 WSMD/SMTTO - 252 - 3Cut Tape , ReelSi1 Channel- 20 V , + 20 V31 nCEnhancement  
Hot IRFR9014PBF


P-Channel 60 V 5.1A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak
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Vishay Availability : 13549
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USD 0.3949

Multiples of: 1

5.1 A60 V500 mOhmsP - Channel 2 V- 55 C+ 150 C25 WSmd/SmtTO - 252 - 3TubeSi1 Channel10 V12 nCEnhancement  
80N03


30V 80A 4.8mΩ 2.5V N Channel TO-252 MOSFETs ROHS
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HL Availability : 13541
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USD 0.0513

Multiples of: 5

                   
IPL60R1K5C6SATMA1


Transistor: N-MOSFET; unipolar; 600V; 3A; 26.6W; PG-VSON-4
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Infineon Availability : 13538
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USD 0.3894

Multiples of: 1

            Coolmos C6      
IRLML6302(UWM)


SOT-23 MOSFETs ROHS
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Youtai Availability : 13531
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USD 0.0307

Multiples of: 10

                   
MCM3400A-TP


MOSFET N-Ch 30Vds 12Vgs 5.0A 1.4W 30Vdss
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Micro Commercial Components (MCC) Availability : 13507
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USD 0.0935

Multiples of: 1

           Cut Tape       
IRFS3806TRLPBF


MOSFET MOSFT 60V 43A 16.2mOhm 22nC Qg
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Infineon Availability : 13498
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USD 0.5478

Multiples of: 1

43 A60 V12.6 mOhmsN - Channel    71 WSmd/SmtD2PAKReelSi1 Channel20 V22 nC   
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