X-On Electronics has gained recognition as a prominent supplier of NTMFS4C029NT3G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTMFS4C029NT3G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTMFS4C029NT3G ON Semiconductor

NTMFS4C029NT3G electronic component of ON Semiconductor
NTMFS4C029NT3G ON Semiconductor
NTMFS4C029NT3G MOSFETs
NTMFS4C029NT3G  Semiconductors

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See Product Specifications
Part No. NTMFS4C029NT3G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET TRENCH 6 30V NCH
Datasheet: NTMFS4C029NT3G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.4 ea
Line Total: USD 1.4 
Availability - 14542
Ship by Fri. 13 Jun to Tue. 17 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
14542
Ship by Fri. 13 Jun to Tue. 17 Jun
MOQ : 1
Multiples : 1
1 : USD 1.4
10 : USD 1.0776
100 : USD 0.7216
500 : USD 0.6116
1000 : USD 0.572
2500 : USD 0.572
5000 : USD 0.572
10000 : USD 0.5555
25000 : USD 0.55

   
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We are delighted to provide the NTMFS4C029NT3G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTMFS4C029NT3G and other electronic components in the MOSFETs category and beyond.

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NTMFS4C029N MOSFET Power, Single, N-Channel, SO-8 FL 30 V, 46 A Features Low R to Minimize Conduction Losses DS(on) www.onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V R MAX I MAX (BR)DSS DS(ON) D These Devices are PbFree, Halogen Free/BFR Free and are RoHS 5.88 m 10 V Compliant 30 V 46 A 9.0 m 4.5 V Applications CPU Power Delivery D (58) DCDC Converters MAXIMUM RATINGS (T = 25C unless otherwise stated) J Parameter Symbol Value Unit DraintoSource Voltage V 30 V G (4) DSS GatetoSource Voltage V 20 V GS Continuous Drain T = 25C I 15.0 A A D S (1,2,3) Current R JA NCHANNEL MOSFET T = 80C 11.2 A (Note 1) Power Dissipation T = 25C P 2.49 W A D MARKING R (Note 1) JA DIAGRAMS Continuous Drain T = 25C I 22.5 A A D D Current R 10 s JA T = 80C 16.8 A S D (Note 1) SO8 FLAT LEAD S 4C029 Power Dissipation T = 25C P 5.6 W CASE 488AA A D AYWZZ S R 10 s (Note 1) JA STYLE 1 Steady G D State Continuous Drain T = 25C I 8.2 A 1 A D D Current R JA T = 80C 6.2 A (Note 2) A = Assembly Location Y = Year Power Dissipation T = 25C P 0.75 W A D R (Note 2) W = Work Week JA ZZ = Lot Traceabililty Continuous Drain T = 25C I 46 A C D Current R JC T =80C 34 C (Note 1) Power Dissipation T = 25C P 23.6 W C D ORDERING INFORMATION R (Note 1) JC Pulsed Drain T = 25C, t = 10 s I 132 A Device Package Shipping A p DM Current NTMFS4C029NT1G SO8 FL 1500 / Current Limited by Package T = 25C I 80 A A Dmax (PbFree) Tape & Reel Operating Junction and Storage T , 55 to C J NTMFS4C029NT3G SO8 FL 5000 / Temperature T +150 STG (PbFree) Tape & Reel Source Current (Body Diode) I 21 A S For information on tape and reel specifications, Drain to Source dV/dt dV/d 7.0 V/ns t including part orientation and tape sizes, please Single Pulse DraintoSource Avalanche E 31 mJ AS refer to our Tape and Reel Packaging Specifications Energy (T = 25C, V = 10 V, I = 25 A , J GS L pk Brochure, BRD8011/D. L = 0.1 mH, R = 25 ) (Note 3) GS Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: May, 2019 Rev. 1 NTMFS4C029N/DNTMFS4C029N 2. Surfacemounted on FR4 board using the minimum recommended pad size. 3. This is the absolute maximum rating. Parts are 100% tested at T = 25C, J V = 10 V, I = 17 Apk, E = 14 mJ. GS L AS THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit JunctiontoCase (Drain) R 5.3 JC JunctiontoAmbient Steady State (Note 4) R 50.3 JA C/W JunctiontoAmbient Steady State (Note 5) 165.9 R JA JunctiontoAmbient (t 10 s) (Note 4) R 22.2 JA 4. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu. 5. Surfacemounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 30 V (BR)DSS GS D DraintoSource Breakdown Voltage V V = 0 V, I = 7.1 A, 34 (BR)DSSt GS D(aval) V (transient) T = 25C, t = 100 ns case transient DraintoSource Breakdown Voltage V / 14.5 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1.0 DSS GS J V = 24 V A DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 6) Gate Threshold Voltage V V = V , I = 250 A 1.3 2.2 V GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T 4.7 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 30 A 4.9 5.88 DS(on) GS D m V = 4.5 V I = 15 A 7.41 9.0 GS D Forward Transconductance g V = 1.5 V, I = 15 A 43 S FS DS D Gate Resistance R T = 25C 0.3 1.0 2.0 G A CHARGES AND CAPACITANCES Input Capacitance C 987 ISS Output Capacitance C 574 V = 0 V, f = 1 MHz, V = 15 V pF OSS GS DS Reverse Transfer Capacitance C 162 RSS Capacitance Ratio C /C V = 0 V, V = 15 V, f = 1 MHz 0.165 RSS ISS GS DS Total Gate Charge Q 9.7 G(TOT) Threshold Gate Charge Q 1.5 G(TH) nC GatetoSource Charge Q 2.8 V = 4.5 V, V = 15 V I = 30 A GS GS DS D GatetoDrain Charge Q 4.8 GD Gate Plateau Voltage V 3.2 V GP Total Gate Charge Q V = 10 V, V = 15 V I = 30 A 18.6 nC G(TOT) GS DS D SWITCHING CHARACTERISTICS (Note 7) TurnOn Delay Time t 9.0 d(ON) Rise Time t 34 r V = 4.5 V, V = 15 V, GS DS ns I = 15 A, R = 3.0 D G TurnOff Delay Time t 14 d(OFF) Fall Time t 7.0 f www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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