Product Information

MMBT8550D

MMBT8550D electronic component of Agertech

Datasheet
100nA 25V 350mW 600mA 160@100mA,1V 100MHz 500mV@500mA,50mA PNP +150℃@(Tj) SOT-23 Bipolar Transistors - BJT ROHS

Manufacturer: Agertech
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

50: USD 0.0158 ea
Line Total: USD 0.79

1261 - Global Stock
Ships to you between
Thu. 02 May to Tue. 07 May
MOQ: 50  Multiples: 50
Pack Size: 50
Availability Price Quantity
970 - Global Stock


Ships to you between
Thu. 02 May to Tue. 07 May

MOQ : 50
Multiples : 50

Stock Image

MMBT8550D
Agertech

50 : USD 0.0166
500 : USD 0.0135
3000 : USD 0.0104
6000 : USD 0.0094
24000 : USD 0.0085
51000 : USD 0.0081

     
Manufacturer
Product Category
Category
Rohs
Collector Cut-Off Current Icbo
Collector-Emitter Breakdown Voltage Vceo
Power Dissipation Pd
Collector Current Ic
Dc Current Gain Hfe@Ic Vce
Transition Frequency Ft
Collector-Emitter Saturation Voltage Vcesat@Ic Ib
Transistor Type
Operating Temperature
LoadingGif

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The MMBT8550D PNP Bipolar Transistor is a SOT-23 package component manufactured by Agertech and designed for switching and amplification functions. It is rated for 100 nanoampere (nA) of collector current (Ic), 25 Volts (V) of collector-emitter (Vce) voltage, a maximum of 350 milliwatts (mW) of power, and up to 600 milliamperes (mA) of collector current. The transition frequency (ft) is rated at 100 Megahertz (MHz) and the gain is 160@100mA. Other specifications include: 1V of collector-base (Vcb) voltage, 500 millivolts (mV) at 500mA of forward DC current (Ifor), a maximum of 50mA of reverse DC current (Irev), and a maximum temperature rating of +150° Celsius (?) for junction temperature (Tj). This component is in compliance with Restriction of Hazardous Substances (RoHS) regulations.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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