X-On Electronics has gained recognition as a prominent supplier of AS4C128M16D3L-12BCN dram across the USA, India, Europe, Australia, and various other global locations. AS4C128M16D3L-12BCN dram are a product manufactured by Alliance Memory. We provide cost-effective solutions for dram, ensuring timely deliveries around the world.

AS4C128M16D3L-12BCN

AS4C128M16D3L-12BCN electronic component of Alliance Memory
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Part No.AS4C128M16D3L-12BCN
Manufacturer: Alliance Memory
Category:DRAM
Description: DRAM 2G 1.35V 1600Mhz 128M x 16 DDR3
Datasheet: AS4C128M16D3L-12BCN Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 5.7762 ea
Line Total: USD 28.88

Availability - 0
MOQ: 5  Multiples: 190
Pack Size: 190
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 5
Multiples : 190
5 : USD 5.7762
10 : USD 5.6168
60 : USD 5.4575
125 : USD 5.245

     
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RoHS - XON
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We proudly offer the AS4C128M16D3L-12BCN DRAM at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the AS4C128M16D3L-12BCN DRAM.

AS4C128M16D3 REVISION HISTORY AS4C128M16D3 96-ball FBGA PACKAGE Revision Description Issue Date Rev. 1.0 Initial Issue February 2014 Rev. 2.0 Typing error in Table 2 page 2 incorrect temperature range June 2014 amended to: - Commercial (Extended) (0 ~ 95C) - Industrial (-40 ~ 95C) Rev 3.0 Updated Table 11. Recommended DC Operating Conditions page 21 August 2014 Added CL=5 & CL=6 to Table 18 page 26 Confidential 1 Rev. 3.0 Aug. /2014 AS4C128M16D3 2Gb (128M x 16 bit) DDR3 Synchronous DRAM (SDRAM) Confidential Advanced (Rev. 3.0, Aug. /2014) Overview Features JEDEC Standard Compliant The 2Gb Double-Data-Rate-3 DRAMs is double data rate architecture to achieve high-speed operation. It is Power supplies: V & V = +1.5V 0.075V DD DDQ internally configured as an eight bank DRAM. Operating temperature: The 2Gb chip is organized as 16Mbit x 16 I/Os x 8 - Commercial (0 ~ 95C) bank devices. These synchronous devices achieve high - Industrial (-40 ~ 95C) speed double-data-rate transfer rates of up to 1600 Supports JEDEC clock jitter specification Mb/sec/pin for general applications. Fully synchronous operation The chip is designed to comply with all key DDR3 Fast clock rate: 800MHz DRAM key features and all of the control and address Differential Clock, CK & CK inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the Bidirectional differential data strobe cross point of differential clocks (CK rising and CK - DQS & DQS falling). All I/Os are synchronized with differential DQS 8 internal banks for concurrent operation pair in a source synchronous fashion. 8n-bit prefetch architecture These devices operate with a single 1.5V 0.075V Internal pipeline architecture power supply and are available in BGA packages. Precharge & active power down Programmable Mode & Extended Mode registers Additive Latency (AL): 0, CL-1, CL-2 Programmable Burst lengths: 4, 8 Burst type: Sequential / Interleave Output Driver Impedance Control 8192 refresh cycles / 64ms - Average refresh period 7.8s -40 TC +85 3.9s +85 TC +95 Write Leveling OCD Calibration Dynamic ODT (Rtt Nom & Rtt WR) RoHS compliant Auto Refresh and Self Refresh 96-ball 9 x 13 x 1.2mm FBGA package - All parts are ROHS Compliant Table 1. Speed Grade Information Speed Grade Clock Frequency CAS Latency t (ns) t (ns) RCD RP DDR3-1600 800 MHz 11 13.75 13.75 Table 2 Ordering Information for ROHS Compliant Products Product part No Org Temperature Package AS4C128M16D3-12BCN 128M x 16 Commercial(Extended) 96-ball 0C to 95C FBGA AS4C128M16D3-12BIN 128M x 16 Industrial 96-ball -40C to 95C FBGA Confidential 2 Rev. 3.0 Aug. /2014

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
ACM
ALLIANCE MEMORY, INC.
ALLIANCE SEMI

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