AO4629 30V Complementary MOSFET General Description Product Summary AO4629 uses advanced trench technology to provide N-Channel P-Channel excellent R and low gate charge. This DS(ON) V = 30V -30V DS complementary N and P channel MOSFET configuration is I = 6A (V =10V) -5.5A (V =-10V) D GS GS ideal for low Input Voltage inverter applications. R R DS(ON) DS(ON) < 30m (V =10V) < 41m (V =-10V) GS GS < 42m (V =4.5V) < 74m (V =-4.5V) GS GS 100% UIS Tested 100% UIS Tested 100% R Tested 100% R Tested g g SSOOIICC--88 DD22 DD11 TToopp VViieeww BBoottttoomm VViieeww TToopp VViieeww SS22 DD22 11 88 GG22 DD22 22 77 SS11 DD11 33 66 GG11 44 55 DD11 GG22 GG11 SS22 SS11 Pin1 n-channel p-channel Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Max n-channel Max p-channel Units Drain-Source Voltage V 30 -30 V DS Gate-Source Voltage V 20 20 V GS T =25C 6 -5.5 A Continuous Drain I D Current T =70C 5 -4.5 A A C Pulsed Drain Current I 30 -25 DM C Avalanche Current I , I 10 17 A AS AR C Avalanche energy L=0.1mH E , E 5 14 mJ AS AR T =25C 2 2 A P W D B Power Dissipation T =70C 1.3 1.3 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A Maximum Junction-to-Ambient t 10s 48 62.5 C/W R JA A D Maximum Junction-to-Ambient Steady-State 74 90 C/W Maximum Junction-to-Lead Steady-State R 32 40 C/W JL Rev 2: Nov 2011 www.aosmd.com Page 1 of 9 AO4629 N-Channel Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250A, V =0V 30 V D GS DSS V =30V, V =0V 1 DS GS I Zero Gate Voltage Drain Current DSS A T =55C 5 J uses Gate-Body leakage current V =0V, V = 20V 100 nA DS GS V =V I =250A V Gate Threshold Voltage 1.2 1.8 2.4 V GS(th) DS GS D V =10V, V =5V I On state drain current 30 A D(ON) GS DS V =10V, I =6A 25 30 GS D m R Static Drain-Source On-Resistance T =125C 40 48 DS(ON) J V =4.5V, I =5A 33 42 m GS D V =5V, I =6A g Forward Transconductance 15 S FS DS D V Diode Forward Voltage I =1A,V =0V 0.76 1 V SD S GS I Maximum Body-Diode Continuous Current 2.5 A S DYNAMIC PARAMETERS C Input Capacitance 255 310 pF iss C Output Capacitance V =0V, V =15V, f=1MHz 45 pF GS DS oss C Reverse Transfer Capacitance 35 50 pF rss R Gate resistance V =0V, V =0V, f=1MHz 1.6 3.25 4.9 g GS DS SWITCHING PARAMETERS Q (10V) Total Gate Charge 4 5.2 6.3 nC g Q (4.5V) Total Gate Charge 2 2.55 3.2 nC g V =10V, V =15V, I =6A GS DS D Q Gate Source Charge 0.85 nC gs Q Gate Drain Charge 1.3 nC gd t Turn-On DelayTime 4.5 ns D(on) tt TTuurrnn--OOnn RRiissee TTiimmee VV ==1100VV,, VV ==1155VV,, RR ==22..55,, 22..55 nnss rr GGSS DDSS LL R =3 t Turn-Off DelayTime 14.5 ns D(off) GEN t Turn-Off Fall Time 3.5 ns f t I =6A, dI/dt=100A/s rr Body Diode Reverse Recovery Time F 8.5 12 ns Q I =6A, dI/dt=100A/s nC rr Body Diode Reverse Recovery Charge F 2.2 3 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25C. The value JA A in any given application depends on the user s specific board design. B. The power dissipation P is based on T =150C, using 10s junction-to-ambient thermal resistance. D J(MAX) C. Repetitive rating, pulse width limited by junction temperature T =150C. Ratings are based on low frequency and duty cycles to keep J(MAX) initialT =25C. J D. The R is the sum of the thermal impedence from junction to lead R and lead to ambient. JA JL E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. 2 F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in FR-4 board with 2oz. Copper, assuming a maximum junction temperature of T =150C. The SOA curve provides a single pulse rating. J(MAX) THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 2: Nov 2011 www.aosmd.com Page 2 of 9