AO4803A 30V Dual P-Channel MOSFET General Description Product Summary V The AO4803A uses advanced trench technology to -30V DS provide excellent R with low gate charge. This DS(ON) I (at V =-10V) -5A D GS device is suitable for use as a load switch or in PWM R (at V =-10V) < 46m DS(ON) GS applications. R (at V = -4.5V) < 74m DS(ON) GS 100% UIS Tested 100% R Tested g SSOOIICC--88 DD DD TToopp VViieeww BBoottttoomm VViieeww TToopp VViieeww SS22 11 88 DD22 GG22 DD22 22 77 SS11 33 66 DD11 GG11 DD11 44 55 GG11 GG22 SS11 SS22 PPiinn11 Absolute Maximum Ratings T =25C unless otherwise noted A PPaarraammeetteerr SSyymmbbooll MMaaxxiimmuumm UUnniittss Drain-Source Voltage V -30 V DS Gate-Source Voltage V 20 V GS T =25C -5 A Continuous Drain I D Current T =70C -4 A A C Pulsed Drain Current I -30 DM C Avalanche Current I , I 17 A AS AR C Avalanche energy L=0.1mH E , E 14 mJ AS AR T =25C 2 A P W D B T =70C Power Dissipation 1.3 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A Maximum Junction-to-Ambient t 10s 48 62.5 C/W R A D JA Maximum Junction-to-Ambient Steady-State 74 110 C/W Maximum Junction-to-Lead Steady-State R 35 40 C/W JL Rev 2: Nov 2011 www.aosmd.com Page 1 of 6 AO4803A Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =-250A, V =0V -30 V D GS DSS V =-30V, V =0V -1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C -5 J V =0V, V = 20V I Gate-Body leakage current 100 nA GSS DS GS V Gate Threshold Voltage V =V I =-250A -1.5 -2 -2.5 V GS(th) DS GS D I On state drain current V =-10V, V =-5V -30 A GS DS D(ON) V =-10V, I =-5A 32 46 GS D m R Static Drain-Source On-Resistance T =125C 48 68 DS(ON) J V =-4.5V, I =-4A 51 74 m GS D g Forward Transconductance V =-5V, I =-5A 13 S FS DS D V Diode Forward Voltage I =-1A,V =0V -0.7 -1 V S GS SD I Maximum Body-Diode Continuous Current -2.5 A S DYNAMIC PARAMETERS C Input Capacitance 520 pF iss V =0V, V =-15V, f=1MHz C Output Capacitance 100 pF oss GS DS C Reverse Transfer Capacitance 65 pF rss R Gate resistance V =0V, V =0V, f=1MHz 3.5 7.5 11.5 g GS DS SWITCHING PARAMETERS Q (10V) Total Gate Charge 9.2 11 nC g Q (4.5V) Total Gate Charge 4.6 6 nC g V =-10V, V =-15V, I =-5A GS DS D Q Gate Source Charge 1.6 nC gs Q Gate Drain Charge 2.2 nC gd t Turn-On DelayTime 7.5 ns D(on) tt TTuurrnn--OOnn RRiissee TTiimmee VV ==--1100VV,, VV ==--1155VV,, RR ==33,, 55..55 nnss r GS DS L R =3 t Turn-Off DelayTime 19 ns D(off) GEN t Turn-Off Fall Time 7 ns f t I =-5A, dI/dt=100A/s rr Body Diode Reverse Recovery Time F 11 ns Q I =-5A, dI/dt=100A/s nC rr Body Diode Reverse Recovery Charge F 5.3 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The JA A value in any given application depends on the user s specific board design. B. The power dissipation P is based on T =150 C, using 10s junction-to-ambient thermal resistance. D J(MAX) C. Repetitive rating, pulse width limited by junction temperature T =150 C. Ratings are based on low frequency and duty cycles to keep J(MAX) initialT =25 C. J D. The R is the sum of the thermal impedence from junction to lead R and lead to ambient. JA JL E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. 2 F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in FR-4 board with 2oz. Copper, assuming a maximum junction temperature of T =150 C. The SOA curve provides a single pulse rating. J(MAX) THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 2: Nov 2011 www.aosmd.com Page 2 of 6