AO6401A 30V P-Channel MOSFET General Description Product Summary V -30V The AO6401A uses advanced trench technology to DS provide excellent R , low gate charge and operation DS(ON) I (at V =-10V) -5A D GS with gate voltages as low as 2.5V. This device is suitable R (at V =-10V) < 47m DS(ON) GS for use as a load switch or in PWM applications. R (at V =-4.5V) < 64m DS(ON) GS R (at V =-2.5V) < 85m DS(ON) GS TSOP6 D Top View Bottom View Top View D D 1 6 D D 2 5 G G 3 4 S S Pin1 Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units Drain-Source Voltage V -30 V DS Gate-Source Voltage V 12 V GS T =25C -5 A Continuous Drain I D T =70C Current -4 A A C Pulsed Drain Current I -28 DM T =25C 2 A P W D B T =70C Power Dissipation 1.3 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A Maximum Junction-to-Ambient t 10s 47.5 62.5 C/W R A D JA Maximum Junction-to-Ambient Steady-State 74 110 C/W Maximum Junction-to-Lead Steady-State R 37 50 C/W JL Rev 1: Mar 2011 www.aosmd.com Page 1 of 5 AO6401A Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =-250A, V =0V -30 V D GS DSS V =-30V, V =0V -1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C -5 J V =0V, V =12V I Gate-Body leakage current 100 nA GSS DS GS V V =V I =-250A Gate Threshold Voltage -0.5 -0.9 -1.3 V GS(th) DS GS D I On state drain current V =-10V, V =-5V -28 A GS DS D(ON) V =-10V, I =-5A 39 47 GS D m T =125C 60 74 J R Static Drain-Source On-Resistance DS(ON) V =-4.5V, I =-4A 45 64 m GS D V =-2.5V, I =-1A 59 85 m GS D g Forward Transconductance V =-5V, I =-5A 18 S DS D FS V Diode Forward Voltage I =-1A,V =0V -0.7 -1 V SD S GS I Maximum Body-Diode Continuous Current -2.5 A S DYNAMIC PARAMETERS C Input Capacitance 645 780 pF iss V =0V, V =-15V, f=1MHz C Output Capacitance 80 pF GS DS oss C Reverse Transfer Capacitance 55 80 pF rss R Gate resistance V =0V, V =0V, f=1MHz 4 7.8 12 g GS DS SWITCHING PARAMETERS Q (10V) Total Gate Charge 14 17 nC g Q (4.5V) Total Gate Charge 7 8.5 nC g V =-10V, V =-15V, I =-5A GS DS D Q Gate Source Charge 1.5 nC gs Q Gate Drain Charge 2.5 nC gd t Turn-On DelayTime 6.5 ns D(on) t Turn-On Rise Time V =-10V, V =-15V, R =3, 3.5 ns r GS DS L R =3 t Turn-Off DelayTime 41 ns GEN D(off) t Turn-Off Fall Time 9 ns f t I =-5A, dI/dt=100A/s rr Body Diode Reverse Recovery Time F 11 13.5 ns Q I =-5A, dI/dt=100A/s nC rr Body Diode Reverse Recovery Charge F 3.5 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25C. The JA A value in any given application depends on the user s specific board design. B. The power dissipation P is based on T =150C, using 10s junction-to-ambient thermal resistance. D J(MAX) C. Repetitive rating, pulse width limited by junction temperature T =150C. Ratings are based on low frequency and duty cycles to keep J(MAX) initialT =25C. J D. The R is the sum of the thermal impedance from junction to lead R and lead to ambient. JA JL E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. 2 F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in FR-4 board with 2oz. Copper, assuming a maximum junction temperature of T =150C. The SOA curve provides a single pulse ratin g. J(MAX) THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 1: Mar 2011 www.aosmd.com Page 2 of 5