AO6804A 20V Dual N-Channel MOSFET General Description Product Summary The AO6804A uses advanced trench technology to V = 20V DS provide excellent R , low gate charge and operation I = 5.0A (V = 4.5V) DS(ON) D GS with gate voltages as low as 2.5V. This device is R < 28m (V = 4.5V) DS(ON) GS suitable for use as a load switch applications. R < 30m (V = 4.0V) DS(ON) GS R < 34m (V = 3.1V) DS(ON) GS R < 39m (V = 2.5V) DS(ON) GS TSOP6 D1 D2 Top View Bottom View Top View 11 11 S1 G1 Rg Rg 1 6 G1 G2 D1/D2 D1/D2 2 5 3 4 S2 G2 S1 S2 Pin1 Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units Drain-Source Voltage V 20 V DS Gate-Source Voltage V 12 V GS T =25C 5 Continuous Drain A A T =70C I Current 4 A A D B Pulsed Drain Current I 25 DM T =25C 1.3 A A P W Power Dissipation D T =70C 0.8 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A Maximum Junction-to-Ambient t 10s 76 95 C/W R JA A Maximum Junction-to-Ambient Steady State 118 150 C/W C Maximum Junction-to-Lead Steady State R 54 68 C/W JL Alpha & Omega Semiconductor, Ltd. www.aosmd.comAO6804A Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I = 250A, V = 0V 20 V D GS DSS V = 20V, V = 0V 1 DS GS I Zero Gate Voltage Drain Current A DSS T = 55C 5 J V = 0V, V = 10V I Gate-Body leakage current 10 A GSS DS GS V Gate Threshold Voltage V = V I = 250A 0.5 0.7 1 V GS(th) DS GS D I On state drain current V = 4.5V, V = 5V 25 A GS DS D(ON) V = 4.5V, I = 5.0A 18 23 28 GS D m T =125C 26 33 40 J R Static Drain-Source On-Resistance V = 4.0V, I = 4.5A 19 24 30 m DS(ON) GS D V = 3.1V, I = 4.5A 20 27 34 m GS D V = 2.5V, I = 4.0A 21 30 39 m GS D V = 5V, I = 5.0A g Forward Transconductance 18 S DS D FS I = 1A,V = 0V V Diode Forward Voltage 0.65 1 V S GS SD I Maximum Body-Diode Continuous Current 1.3 A S DYNAMIC PARAMETERS C Input Capacitance 180 225 pF iss V =0V, V =10V, f=1MHz C Output Capacitance 95 pF GS DS oss C Reverse Transfer Capacitance 18 pF rss V =0V, V =0V, f=1MHz R Gate resistance 2.7 4 k g GS DS SWITCHING PARAMETERS Q Total Gate Charge 5.6 7.5 nC g V = 4.5V, V = 10V, I = 5A Q Gate Source Charge 0.85 nC GS DS D gs Q Gate Drain Charge 1.7 nC gd t Turn-On DelayTime 172 ns D(on) t Turn-On Rise Time V =10V, V =10V, R =2.0, 368 ns r GS DS L R =3 t Turn-Off DelayTime 2.94 s GEN D(off) t Turn-Off Fall Time 2.5 s f t Body Diode Reverse Recovery Time I =5A, dI/dt=100A/s 32 43 ns rr F Q I =5A, dI/dt=100A/s 3.2 nC rr Body Diode Reverse Recovery Charge F 2 A: The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T = 25C. in JA A any given application depends on the user s specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R is the sum of the thermal impedence from junction to lead R and lead to ambient. JA JL D. The static characteristics in Figures 1 to 6 are obtained using < 300s pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25C. The SOA A curve provides a single pulse rating. Rev2: Nov. 2010 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com