AO7801 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO7801 uses advanced trench technology to provide V (V) = -20V DS excellent R , low gate charge, and operation with gate I = -0.6A (VGS = -4.5V) DS(ON) D voltages as low as 1.8V, in the small SOT363 footprint. It can be used for a wide variety of applications, including load R < 520m (V = -4.5V) DS(ON) GS switching, low current inverters and low current DC-DC R < 700m (V = -2.5V) DS(ON) GS converters. It is ESD protected to 2KV HBM. R < 950m (V = -1.8V) DS(ON) GS SC70-6L (SOT-363) D1 D2 Pin1 Bottom View Top View D1 S1 1 6 G2 G1 2 G1 5 G2 3 4 D2 S2 S2 S1 Pin1 Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units Drain-Source Voltage V -20 V DS Gate-Source Voltage V 8 V GS T =25C -0.6 Continuous Drain A A Current T =70C I -0.48 A A D B Pulsed Drain Current I -3 DM T =25C 0.3 A P W D A Power Dissipation T =70C 0.19 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A Maximum Junction-to-Ambient t 10s 360 415 C/W R JA A Maximum Junction-to-Ambient Steady-State 400 460 C/W C Steady-State R 300 350 C/W Maximum Junction-to-Lead JL Rev 3: April 2015 www.aosmd.com Page 1 of 5 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =-250A, V =0V -20 V D GS DSS V =-16V, V =0V -1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C -5 J I Gate-Body leakage current V =0V, V =8V 10 A GSS DS GS V Gate Threshold Voltage V =V I =-250A -0.5 -0.6 -0.9 V GS(th) DS GS D I On state drain current V =-4.5V, V =-5V -3 A GS DS D(ON) V =-4.5V, I =-0.6A 400 520 GS D m T =125C 542 700 J R Static Drain-Source On-Resistance DS(ON) V =-2.5V, I =-0.5A 540 700 m GS D V =-1.8V, I =-0.4A 700 950 m GS D g Forward Transconductance V =-5V, I =-0.6A 1.7 S DS D FS I =-0.5A,V =0V V Diode Forward Voltage -0.86 -1 V S GS SD I Maximum Body-Diode Continuous Current -0.4 A S DYNAMIC PARAMETERS C Input Capacitance 114 140 pF iss V =0V, V =-10V, f=1MHz C Output Capacitance 17 pF GS DS oss C Reverse Transfer Capacitance 14 pF rss V =0V, V =0V, f=1MHz R Gate resistance 12 17 g GS DS SWITCHING PARAMETERS Q Total Gate Charge 1.44 1.8 nC g V =-4.5V, V =-10V, I =-0.6A Q Gate Source Charge 0.14 nC GS DS D gs Q Gate Drain Charge 0.35 nC gd tt TTuurrnn--OOnn DDeellaayyTTiimmee 66..55 nnss D(on) D(on) V =-4.5V, V =-10V, t Turn-On Rise Time 6.5 ns r GS DS R =16.7, R =3 t Turn-Off DelayTime 18.2 ns L GEN D(off) t Turn-Off Fall Time 5.5 ns f t I =-0.6A, dI/dt=100A/s 10 13 rr Body Diode Reverse Recovery Time F ns Q I =-0.6A, dI/dt=100A/s 3 nC rr Body Diode Reverse Recovery Charge F 2 A: The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. JA A The value in any a given application depends on the user s specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R is the sum of the thermal impedence from junction to lead R and lead to ambient. JA JL D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The A SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 3: April 2015 www.aosmd.com Page 2 of 5