AOD4185/AOI4185 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD4185/AOI4185 uses advanced trench V (V) = -40V DS technology to provide excellent R and low gate I = -40A (V = -10V) DS(ON) D GS charge. With the excellent thermal resistance of the R < 15m (V = -10V) DS(ON) GS DPAK/IPAK package, this device is well suited for high R < 20m (V = -4.5V) DS(ON) GS current applications. 100% UIS Tested -RoHS Compliant 100% Rg Tested -Halogen Free* TO252 TO-251A DPAK IPAK D Bottom View Top View Top View Bottom View D D D D G S G S G S S G D D G S Absolute Maximum Ratings T =25C unless otherwise noted C PPaarraammeetteerr SSyymmbbooll MMaaxxiimmuumm UUnniittss Drain-Source Voltage V -40 V DS Gate-Source Voltage V 20 V GS T =25C -40 Continuous Drain C B,H Current T =100C I -31 C D A C Pulsed Drain Current I -115 DM C Avalanche Current I -42 AR C Repetitive avalanche energy L=0.1mH E 88 mJ AR T =25C 62.5 C P D B T =100C Power Dissipation 31 C W T =25C 2.5 A P DSM A Power Dissipation T =70C 1.6 A Junction and Storage Temperature Range T , T -55 to 175 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A,G Maximum Junction-to-Ambient t 10s 15 20 C/W R JA A,G Maximum Junction-to-Ambient Steady-State 41 50 C/W D,F Steady-State R 2 2.4 C/W Maximum Junction-to-Case JC Alpha & Omega Semiconductor, Ltd. www.aosmd.comAOD4185/AOI4185 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS I =-250A, V =0V BV Drain-Source Breakdown Voltage -40 V D GS DSS V =-40V, V =0V -1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C -5 J I Gate-Body leakage current V =0V, V = 20V 100 nA GSS DS GS V Gate Threshold Voltage V =V I =-250A -1.7 -1.9 -3 V DS GS D GS(th) V =-10V, V =-5V I On state drain current -115 A GS DS D(ON) V =-10V, I =-20A 12.5 15 GS D R Static Drain-Source On-Resistance T =125C 19 23 m DS(ON) J V =-4.5V, I =-15A 16 20 GS D g Forward Transconductance V =-5V, I =-20A 50 S DS D FS I =-1A,V =0V V Diode Forward Voltage -0.72 -1 V S GS SD I Maximum Body-Diode Continuous Current -20 A S DYNAMIC PARAMETERS C Input Capacitance 2550 pF iss V =0V, V =-20V, f=1MHz C Output Capacitance 280 pF GS DS oss C Reverse Transfer Capacitance 190 pF rss V =0V, V =0V, f=1MHz R Gate resistance 2.5 4 6 GS DS g SWITCHING PARAMETERS Q (-10V) Total Gate Charge 42 55 nC g Q (-4.5V) Total Gate Charge V =-10V, V =-20V, 18.6 g GS DS I =-20A Q Gate Source Charge D 7 nC gs Q Gate Drain Charge 8.6 nC gd tt TTuurrnn--OOnn DDeellaayyTTiimmee 99..44 nnss DD((oonn)) t Turn-On Rise Time V =-10V, V =-20V, R =1, 20 ns r GS DS L R =3 t Turn-Off DelayTime 55 ns GEN D(off) t Turn-Off Fall Time 30 ns f t I =-20A, dI/dt=100A/s 38 49 rr Body Diode Reverse Recovery Time F ns Q I =-20A, dI/dt=100A/s 47 nC rr Body Diode Reverse Recovery Charge F A: The value of R is measured with the device in a still air environment with T =25 C. The power dissipation P and current rating I are JA A DSM DSM based on T =150 C, using steady state junction-to-ambient thermal resistance. J(MAX) B. The power dissipation P is based on T =175 C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T =175 C. J(MAX) D. The R is the sum of the thermal impedence from junction to case R and case to ambient. JA JC E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a TBD maximum junction temperature of T =175 C. The SOA curve provides a single pulse rating. J(MAX) 2 TBD G. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. A H. The maximum current rating is limited by bond-wires. ST *This device is guaranteed green after data code 8X11 (Sep 1 2008). Rev4: April, 2012 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. AAllpphhaa && OOmmeeggaa SSeemmiiccoonndduuccttoorr,, LLttdd.. wwwwww..aaoossmmdd..ccoomm