AON6232 40V N-Channel MOSFET General Description Product Summary V The AON6232 uses trench MOSFET technology that is DS 40V uniquely optimized to provide the most efficient high 85A I (at V =10V) D GS frequency switching performance.Power losses are < 2.5m R (at V =10V) DS(ON) GS minimized due to an extremely low combination of < 3.6m R (at V = 4.5V) DS(ON) GS R and Crss.In addition,switching behavior is well DS(ON) controlled with aSchottky styl soft recovery body diode. 100% UIS Tested 100% R Tested g DD DDFFNN55XX66 TToopp VViieeww TToopp VViieeww BBoottttoomm VViieeww 11 88 22 77 33 66 44 55 GG SS PPIINN11 Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units DDrraaiinn--SSoouurrccee VVoollttaaggee VV 4400 VV DDSS Gate-Source Voltage V 20 V GS Continuous Drain T =25C 85 C I G D Current T =100C 67 A C C Pulsed Drain Current I 260 DM T =25C 22 Continuous Drain A I A DSM Current T =70C 17 A C Avalanche Current I , I 60 A AS AR C Avalanche energy L=0.1mH E , E 180 mJ AS AR T =25C 83 C P W D B Power Dissipation T =100C 33 C T =25C 2.3 A P W DSM A Power Dissipation T =70C 1.4 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A t 10s Maximum Junction-to-Ambient 14 17 C/W R JA A D Steady-State Maximum Junction-to-Ambient 40 55 C/W Maximum Junction-to-Case Steady-State R 1.1 1.5 C/W JC Rev 0: August 2011 www.aosmd.com Page 1 of 6 AON6232 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250A, V =0V 40 V DSS D GS V =40V, V =0V 1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C 5 J I Gate-Body leakage current V =0V, V =20V 100 nA GSS DS GS V Gate Threshold Voltage V =V I =250A 1.3 1.8 2.3 V GS(th) DS GS, D I On state drain current V =10V, V =5V 260 A D(ON) GS DS V =10V, I =20A 2.05 2.5 GS D m R Static Drain-Source On-Resistance T =125C 3.2 3.9 DS(ON) J m V =4.5V, I =20A 2.8 3.6 GS D g Forward Transconductance V =5V, I =20A 100 S FS DS D V Diode Forward Voltage I =1A,V =0V 0.68 1 V SD S GS G Maximum Body-Diode Continuous Current I 85 A S DYNAMIC PARAMETERS C Input Capacitance 2530 3165 3800 pF iss C V =0V, V =20V, f=1MHz Output Capacitance 630 905 1180 pF oss GS DS C Reverse Transfer Capacitance 15 52.5 90 pF rss R Gate resistance V =0V, V =0V, f=1MHz 0.4 0.85 1.3 g GS DS SWITCHING PARAMETERS Q (10V) Total Gate Charge 33 42 51 nC g Q (4.5V) Total Gate Charge 12 18.2 24 nC g V =10V, V =20V, I =20A GS DS D Q Gate Source Charge 9.6 nC gs Q Gate Drain Charge 2.8 nC gd t Turn-On DelayTime 8.7 ns D(on) tt TTuurrnn--OOnn RRiissee TTiimmee VV ==1100VV,, VV ==2200VV,, RR ==11,, 44..55 nnss r GS DS L t R =3 Turn-Off DelayTime 33.5 ns D(off) GEN t Turn-Off Fall Time 6.2 ns f t I =20A, dI/dt=500A/s 15 rr Body Diode Reverse Recovery Time F 22.5 30 ns Q I =20A, dI/dt=500A/s 41 nC rr Body Diode Reverse Recovery Charge F 59 77 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The JA A Power dissipation P is based on R and the maximum allowed junction temperature of 150 C. The value in any given application depends DSM JA on the user s specific board design. B. The power dissipation P is based on T =150 C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T =150 C. Ratings are based on low frequency and duty cycles to keep J(MAX) initial T =25 C. J D. The R is the sum of the thermal impedance from junction to case R and case to ambient. JA JC E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =150 C. The SOA curve provides a single pulse rating. J(MAX) G. The maximum current rating is package limited. 2 H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. A THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: August 2011 www.aosmd.com Page 2 of 6