AON7240
40V N-Channel MOSFET
General Description Product Summary
V
The AON7240 uses trench MOSFET technology that is 40V
DS
uniquely optimized to provide the most efficient high
I (at V =10V) 40A
D GS
frequency switching performance.Power losses are
R (at V =10V) < 5.1m
DS(ON) GS
minimized due to an extremely low combination of
R (at V = 4.5V) < 7m
DS(ON) GS
R and C .In addition,switching behavior is well
DS(ON) rss
controlled with aSchottky styl soft recovery body diode.
100% UIS Tested
100% R Tested
g
DFN 3x3 EP
D
Top View Bottom View
Top View
1 8
2 7
3
6
G
4 5
Pin 1
S
Absolute Maximum Ratings T =25C unless otherwise noted
A
Parameter Symbol Maximum Units
Drain-Source Voltage V 40 V
DS
Gate-Source Voltage V 20 V
GS
T =25C
Continuous Drain 40
C
I
D
G
Current T =100C 31 A
C
C
Pulsed Drain Current I 144
DM
T =25C 19
A
Continuous Drain
I
A
DSM
T =70C
Current 15
A
C
Avalanche Current I , I 40 A
AS AR
C
Avalanche energy L=0.1mH E , E 80 mJ
AS AR
T =25C 36.7
C
P W
D
B
Power Dissipation T =100C 14
C
T =25C
3.1
A
P
W
DSM
A
Power Dissipation T =70C 2
A
Junction and Storage Temperature Range T , T -55 to 150 C
J STG
Thermal Characteristics
Parameter Symbol Typ Max Units
A
t 10s
Maximum Junction-to-Ambient 30 40 C/W
R
JA
A D
Maximum Junction-to-Ambient Steady-State
60 75 C/W
Maximum Junction-to-Case Steady-State R 2.8 3.4 C/W
JC
Rev 2: Mar. 2011 www.aosmd.com Page 1 of 6 Electrical Characteristics (T =25C unless otherwise noted)
J
Symbol Parameter Conditions Min Typ Max Units
STATIC PARAMETERS
BV Drain-Source Breakdown Voltage I =250A, V =0V 40 V
DSS D GS
V =40V, V =0V 1
DS GS
I
Zero Gate Voltage Drain Current A
DSS
T =55C 5
J
I Gate-Body leakage current V =0V, V = 20V 100 nA
DS GS
GSS
V Gate Threshold Voltage V =V I =250A 1.4 1.9 2.4 V
GS(th) DS GS D
I On state drain current V =10V, V =5V 144 A
D(ON) GS DS
V =10V, I =20A 4.2 5.1
GS D
m
R
Static Drain-Source On-Resistance T =125C 6.3 7.6
DS(ON) J
V =4.5V, I =15A 5.6 7 m
GS D
g Forward Transconductance V =5V, I =20A 67 S
DS D
FS
V Diode Forward Voltage I =1A,V =0V 0.7 1 V
SD S GS
G
I Maximum Body-Diode Continuous Current 40 A
S
DYNAMIC PARAMETERS
C Input Capacitance 1460 1830 2200 pF
iss
V =0V, V =20V, f=1MHz
C Output Capacitance 365 521 680 pF
GS DS
oss
C Reverse Transfer Capacitance 20 43 73 pF
rss
R Gate resistance V =0V, V =0V, f=1MHz 0.4 0.8 1.2
g GS DS
SWITCHING PARAMETERS
Q (10V) Total Gate Charge 22 27.8 35 nC
g
Q (4.5V) Total Gate Charge 10 12.8 15 nC
g
V =10V, V =20V, I =20A
GS DS D
Q Gate Source Charge 3 3.9 5 nC
gs
Q Gate Drain Charge 2 6 10 nC
gd
t Turn-On DelayTime 7.2 ns
D(on)
t Turn-On Rise Time V =10V, V =20V, R =1, 3 ns
r GS DS L
R =3
t Turn-Off DelayTime 23 ns
GEN
D(off)
t Turn-Off Fall Time 3.5 ns
f
t I =20A, dI/dt=500A/s
11
rr Body Diode Reverse Recovery Time F 16.5 21 ns
Q I =20A, dI/dt=500A/s
28 nC
rr Body Diode Reverse Recovery Charge F 40 52
2
A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25C. The
JA A
Power dissipation P is based on R t 10s value and the maximum allowed junction temperature of 150C. The value in any given
DSM JA
application depends on the user's specific board design, and the maximum temperature of 150C may be u sed if the PCB allows it.
B. The power dissipation P is based on T =150C, using junction-to-case thermal resistance, and is more useful in setting the upper
D J(MAX)
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T =150C. Ratings are based on low frequency and duty cycles to keep
J(MAX)
initial T =25C.
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D. The R is the sum of the thermal impedence from junction to case R and case to ambient.
JA JC
E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of T =150C. The SOA curve provides a single pulse ratin g.
J(MAX)
G. The maximum current rating is package limited.
2
H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25C.
A
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 2: Mar. 2011 www.aosmd.com Page 2 of 6