X-On Electronics has gained recognition as a prominent supplier of AON7418 MOSFETs across the USA, India, Europe, Australia, and various other global locations. AON7418 MOSFETs are a product manufactured by Alpha & Omega. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

AON7418 Alpha & Omega

AON7418 electronic component of Alpha & Omega
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Part No.AON7418
Manufacturer: Alpha & Omega
Category: MOSFETs
Description: N-Channel 30 V 46A (Ta), 50A (Tc) 6.2W (Ta), 83W (Tc) Surface Mount 8-DFN-EP (3.3x3.3)
Datasheet: AON7418 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.7271 ea
Line Total: USD 0.73 
Availability - 1247
Ship by Thu. 14 Nov to Tue. 19 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1247
Ship by Thu. 14 Nov to Tue. 19 Nov
MOQ : 1
Multiples : 1
1 : USD 0.7271
10 : USD 0.5987
30 : USD 0.5334
100 : USD 0.4702
500 : USD 0.4126
1000 : USD 0.3934

   
Manufacturer
Product Category
Brand
Rohs
Package
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta 25°C
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We are delighted to provide the AON7418 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AON7418 and other electronic components in the MOSFETs category and beyond.

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AON7418 30V N-Channel AlphaMOS General Description Product Summary V 30V Latest Trench Power AlphaMOS (MOS LV) technology DS Very Low RDS(on) at 4.5V I (at V =10V) 50A GS D GS Low Gate Charge R (at V =10V) < 1.7m DS(ON) GS High Current Capability R (at V = 4.5V) < 2.8m DS(ON) GS RoHS and Halogen-Free Compliant Application 100% UIS Tested DC/DC Converters in Computing, Servers, and POL 100% R Tested g Isolated DC/DC Converters in Telecom and Industrial DFN 3.3x3.3 EP D Top View Bottom View Top View 1 8 2 7 3 6 4 G 5 S Pin 1 Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units Drain-Source Voltage V 30 V DS Gate-Source Voltage V 20 V GS T =25C Continuous Drain 50 C I D G Current T =100C 39 A C C Pulsed Drain Current I 200 DM T =25C 46 A Continuous Drain I A DSM Current T =70C 37 A C Avalanche Current I 66 A AS C Avalanche energy L=0.05mH E 109 mJ AS V Spike 100ns V 36 V DS SPIKE T =25C 83 C P W D B Power Dissipation T =100C 33 C T =25C 6.2 A P W DSM A T =70C Power Dissipation 4 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A t 10s Maximum Junction-to-Ambient 16 20 C/W R A D JA Maximum Junction-to-Ambient Steady-State 45 55 C/W Maximum Junction-to-Case Steady-State R 1.1 1.5 C/W JC www.aosmd.com Rev 0: Oct 2011 Page 1 of 6 AON7418 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250A, V =0V 30 V D GS DSS V =30V, V =0V 1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C 5 J V =0V, V = 20V I Gate-Body leakage current 100 nA GSS DS GS V V =V I =250A Gate Threshold Voltage 1.2 1.8 2.2 V GS(th) DS GS D V =10V, I =20A 1.4 1.7 GS D m R Static Drain-Source On-Resistance T =125C 2.1 2.6 DS(ON) J V =4.5V, I =20A 2.2 2.8 m GS D V =5V, I =20A g Forward Transconductance 153 S FS DS D I =1A,V =0V V Diode Forward Voltage 0.7 1 V SD S GS G I Maximum Body-Diode Continuous Current 50 A S DYNAMIC PARAMETERS C Input Capacitance 2994 pF iss V =0V, V =15V, f=1MHz C Output Capacitance 1276 pF oss GS DS C Reverse Transfer Capacitance 196 pF rss R Gate resistance V =0V, V =0V, f=1MHz 0.4 0.9 1.4 GS DS g SWITCHING PARAMETERS Q (10V) Total Gate Charge 47.7 65 nC g Q (4.5V) Total Gate Charge 23 31 nC g V =10V, V =15V, I =20A GS DS D Q Gate Source Charge 7.6 nC gs Q Gate Drain Charge 10 nC gd t Turn-On DelayTime 10.5 ns D(on) t Turn-On Rise Time V =10V, V =15V, R =0.75, 7.5 ns r GS DS L RR ==33 tt TTuurrnn--OOffff DDeellaayyTTiimmee 3300..88 nnss D(off) GEN t Turn-Off Fall Time 8.8 ns f t I =20A, dI/dt=500A/s rr Body Diode Reverse Recovery Time F 20 ns Q I =20A, dI/dt=500A/s nC rr Body Diode Reverse Recovery Charge F 46 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The JA A Power dissipation P is based on R and the maximum allowed junction temperature of 150 C. The value in any given application depends DSM JA on the user s specific board design. B. The power dissipation P is based on T =150 C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature T =150 C. J(MAX) D. The R is the sum of the thermal impedance from junction to case R and case to ambient. JA JC E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =150 C. The SOA curve provides a single pulse rating. J(MAX) G. The maximum current rating is package limited. 2 H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. A THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: Oct 2011 www.aosmd.com Page 2 of 6

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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