AON7418 30V N-Channel AlphaMOS General Description Product Summary V 30V Latest Trench Power AlphaMOS (MOS LV) technology DS Very Low RDS(on) at 4.5V I (at V =10V) 50A GS D GS Low Gate Charge R (at V =10V) < 1.7m DS(ON) GS High Current Capability R (at V = 4.5V) < 2.8m DS(ON) GS RoHS and Halogen-Free Compliant Application 100% UIS Tested DC/DC Converters in Computing, Servers, and POL 100% R Tested g Isolated DC/DC Converters in Telecom and Industrial DFN 3.3x3.3 EP D Top View Bottom View Top View 1 8 2 7 3 6 4 G 5 S Pin 1 Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units Drain-Source Voltage V 30 V DS Gate-Source Voltage V 20 V GS T =25C Continuous Drain 50 C I D G Current T =100C 39 A C C Pulsed Drain Current I 200 DM T =25C 46 A Continuous Drain I A DSM Current T =70C 37 A C Avalanche Current I 66 A AS C Avalanche energy L=0.05mH E 109 mJ AS V Spike 100ns V 36 V DS SPIKE T =25C 83 C P W D B Power Dissipation T =100C 33 C T =25C 6.2 A P W DSM A T =70C Power Dissipation 4 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A t 10s Maximum Junction-to-Ambient 16 20 C/W R A D JA Maximum Junction-to-Ambient Steady-State 45 55 C/W Maximum Junction-to-Case Steady-State R 1.1 1.5 C/W JC www.aosmd.com Rev 0: Oct 2011 Page 1 of 6 AON7418 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250A, V =0V 30 V D GS DSS V =30V, V =0V 1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C 5 J V =0V, V = 20V I Gate-Body leakage current 100 nA GSS DS GS V V =V I =250A Gate Threshold Voltage 1.2 1.8 2.2 V GS(th) DS GS D V =10V, I =20A 1.4 1.7 GS D m R Static Drain-Source On-Resistance T =125C 2.1 2.6 DS(ON) J V =4.5V, I =20A 2.2 2.8 m GS D V =5V, I =20A g Forward Transconductance 153 S FS DS D I =1A,V =0V V Diode Forward Voltage 0.7 1 V SD S GS G I Maximum Body-Diode Continuous Current 50 A S DYNAMIC PARAMETERS C Input Capacitance 2994 pF iss V =0V, V =15V, f=1MHz C Output Capacitance 1276 pF oss GS DS C Reverse Transfer Capacitance 196 pF rss R Gate resistance V =0V, V =0V, f=1MHz 0.4 0.9 1.4 GS DS g SWITCHING PARAMETERS Q (10V) Total Gate Charge 47.7 65 nC g Q (4.5V) Total Gate Charge 23 31 nC g V =10V, V =15V, I =20A GS DS D Q Gate Source Charge 7.6 nC gs Q Gate Drain Charge 10 nC gd t Turn-On DelayTime 10.5 ns D(on) t Turn-On Rise Time V =10V, V =15V, R =0.75, 7.5 ns r GS DS L RR ==33 tt TTuurrnn--OOffff DDeellaayyTTiimmee 3300..88 nnss D(off) GEN t Turn-Off Fall Time 8.8 ns f t I =20A, dI/dt=500A/s rr Body Diode Reverse Recovery Time F 20 ns Q I =20A, dI/dt=500A/s nC rr Body Diode Reverse Recovery Charge F 46 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The JA A Power dissipation P is based on R and the maximum allowed junction temperature of 150 C. The value in any given application depends DSM JA on the user s specific board design. B. The power dissipation P is based on T =150 C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature T =150 C. J(MAX) D. The R is the sum of the thermal impedance from junction to case R and case to ambient. JA JC E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =150 C. The SOA curve provides a single pulse rating. J(MAX) G. The maximum current rating is package limited. 2 H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. A THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: Oct 2011 www.aosmd.com Page 2 of 6