Product Information

MAT01AHZ

MAT01AHZ electronic component of Analog Devices

Datasheet
Analog Devices Bipolar Transistors - BJT MATCHED MONO DUAL NPN

Manufacturer: Analog Devices
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 35.6868 ea
Line Total: USD 35.6868

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - Global Stock


Ships to you between Thu. 11 Apr to Mon. 15 Apr

MOQ : 1
Multiples : 1

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MAT01AHZ
Analog Devices

1 : USD 42.3684
10 : USD 39.5388
50 : USD 37.8756
100 : USD 34.3224
500 : USD 33.4908

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Height
Length
Continuous Collector Current
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Matched Monolithic Dual Transistor Data Sheet MAT01 FEATURES PIN CONNECTION DIAGRAM MAT01 Low V (V match): 40 V typical, 100 V maximum OS BE TOP VIEW (Not to Scale) Low TCV : 0.5 V/C maximum OS High h : 500 minimum FE C C 1 2 1 6 Excellent h linearity from 10 nA to 10 mA FE Low noise voltage: 0.23 V p-p from 0.1 Hz to 10 Hz B 2 5 B 1 2 High breakdown: 45 V min 3 4 E E APPLICATIONS 1 2 Weigh scales NOTES 1. SUBSTRATE IS CONNECTED TO CASE. Low noise, op amp, front end Figure 1. Current mirror and current sink/source Low noise instrumentation amplifiers Voltage controlled attenuators Log amplifiers GENERAL DESCRIPTION The MAT01 is a monolithic dual NPN transistor. An exclusive High hFE is provided over a six decade range of collector silicon nitride triple passivation process provides excellent current, including an exceptional hFE of 590 at a collector stability of critical parameters over both temperature and time. current of only 10 nA. The high gain at low collector current Matching characteristics include offset voltage of 40 V, makes the MAT01 ideal for use in low power, low level input temperature drift of 0.15 V/C, and h matching of 0.7%. stages. FE Rev. D Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. rights of third parties that may result from its use. Specifications subject to change without notice. No Tel: 781.329.4700 19732014 Analog Devices, Inc. All rights reserved. license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. Technical Support www.analog.com 00282-001MAT01 Data Sheet TABLE OF CONTENTS Features .............................................................................................. 1 ESD Caution...................................................................................5 Applications ....................................................................................... 1 Typical Performance Characteristics ..............................................6 Pin Connection Diagram ................................................................ 1 Test Circuits ........................................................................................8 General Description ......................................................................... 1 Applications Information .................................................................9 Revision History ............................................................................... 2 Typical Applications ....................................................................... 10 Specifications ..................................................................................... 3 Outline Dimensions ....................................................................... 11 Electrical Characteristics ............................................................. 3 Ordering Guide .......................................................................... 11 Absolute Maximum Ratings ............................................................ 5 REVISION HISTORY 9/14Rev. C to Rev. D 2/02Rev. A to Rev. B Changes to Figure 4 and Figure 7 ................................................... 6 Edits to Features................................................................................. 1 Deleted Wafer Test Limits ................................................................ 3 4/13Rev. B to Rev. C Deleted DICE Characteristics .......................................................... 3 Updated Format .................................................................. Universal Edits to Table 5 ...................................................................................7 Added Applications Section, Deleted Figure 2, Renumbered Sequentially ................................................................ 1 Deleted Table 3, Renumbered Sequentially................................... 4 Changes to Table 3 ............................................................................ 5 Changes to Typical Performance Characteristics Section ........... 6 Updated Outline Dimensions ....................................................... 11 Changes to Ordering Guide .......................................................... 11 Rev. D Page 2 of 12

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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