Product Information

2N4401

Product Image X-ON

Datasheet
Trans GP BJT NPN 40V 0.6A 3-Pin TO-92 Bulk
Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.2451 ea
Line Total: USD 2.2451

1 - Global Stock
Ships to you between
Fri. 16 Jun to Thu. 22 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
1 - Global Stock


Ships to you between Fri. 16 Jun to Thu. 22 Jun

MOQ : 1
Multiples : 1

Stock Image

2N4401
ON Semiconductor

1 : USD 2.1588
101 : USD 1.9625
250 : USD 0.585
500 : USD 0.4038
1000 : USD 0.303
2500 : USD 0.2163
5000 : USD 0.15
10000 : USD 0.0875

Read More Specifications

     
Manufacturer
ON Semiconductor
Product Category
Bipolar Transistors - BJT
RoHS - XON
N Icon ROHS
Mounting Style
Through Hole
Package / Case
TO - 92 - 3
Transistor Polarity
Npn
Configuration
Single
Maximum DC Collector Current
0.6 A
Collector- Emitter Voltage VCEO Max
40 V
Collector- Base Voltage VCBO
60 V
Emitter- Base Voltage VEBO
6 V
Collector-Emitter Saturation Voltage
0.75 V
Pd - Power Dissipation
625 mW
Gain Bandwidth Product fT
250 Mhz
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Packaging
Bulk
Height
5.33 mm
Length
5.2 mm
Width
4.19 mm
Brand
On Semiconductor
Continuous Collector Current
0.6 A
Dc Collector/Base Gain Hfe Min
20
Product Type
Bjts - Bipolar Transistors
Factory Pack Quantity :
5000
Subcategory
Transistors
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Additional Infomation About Product

2N4401 General Purpose Transistors NPN Silicon 2N4401 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage (Note 1) (I = 1.0 mAdc, I = 0) V 40 Vdc C B (BR)CEO Collector Base Breakdown Voltage (I = 0.1 mAdc, I = 0) V 60 Vdc C E (BR)CBO Emitter Base Breakdown Voltage (I = 0.1 mAdc, I = 0) V 6.0 Vdc E C (BR)EBO Base Cutoff Current (V = 35 Vdc, V = 0.4 Vdc) I 0.1 Adc CE EB BEV Collector Cutoff Current (V = 35 Vdc, V = 0.4 Vdc) I 0.1 Adc CE EB CEX ON CHARACTERISTICS (Note 1) DC Current Gain h FE (I = 0.1 mAdc, V = 1.0 Vdc) 20 C CE (I = 1.0 mAdc, V = 1.0 Vdc) 40 C CE (I = 10 mAdc, V = 1.0 Vdc) 80 C CE (I = 150 mAdc, V = 1.0 Vdc) 100 300 C CE (I = 500 mAdc, V = 2.0 Vdc) 40 C CE Collector Emitter Saturation Voltage (I = 150 mAdc, I = 15 mAdc) V 0.4 Vdc C B CE(sat) (I = 500 mAdc, I = 50 mAdc) 0.75 C B Base Emitter Saturation Voltage (I = 150 mAdc, I = 15 mAdc) V 0.75 0.95 Vdc C B BE(sat) 1.2 (I = 500 mAdc, I = 50 mAdc) C B SMALLSIGNAL CHARACTERISTICS Current Gain Bandwidth Product (I = 20 mAdc, V = 10 Vdc, f = 100 MHz) f 250 MHz C CE T CollectorBase Capacitance (V = 5.0 Vdc, I = 0, f = 1.0 MHz) C 6.5 pF CB E cb EmitterBase Capacitance (V = 0.5 Vdc, I = 0, f = 1.0 MHz) C 30 pF EB C eb Input Impedance (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) h 1.0 15 k C CE ie 4 Voltage Feedback Ratio (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) h 0.1 8.0 X 10 C CE re SmallSignal Current Gain (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) h 40 500 C CE fe Output Admittance (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) h 1.0 30 mhos C CE oe SWITCHING CHARACTERISTICS Delay Time t 15 ns d (V = 30 Vdc, V = 2.0 Vdc, CC BE I = 150 mAdc, I = 15 mAdc) Rise Time C B1 t 20 ns r Storage Time t 225 ns (V = 30 Vdc, I = 150 mAdc, s CC C I = I = 15 mAdc) B1 B2 Fall Time t 30 ns f 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. ORDERING INFORMATION Device Package Shipping 2N4401 TO92 5000 Units / Bulk 2N4401G TO92 5000 Units / Bulk (Pb Free) 2N4401RLRA TO92 2000 / Tape & Reel 2N4401RLRAG TO92 2000 / Tape & Reel (Pb Free) 2N4401RLRMG TO92 2000 / Tape & Ammo Box (Pb Free) 2N4401RLRP TO92 2000 / Tape & Ammo Box 2N4401RLRPG TO92 2000 / Tape & Ammo Box (Pb Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

Australian Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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