Product Information

AF12N65S

AF12N65S electronic component of AnBon

Datasheet
MOSFET N Trench 650V 12A (Tc) 4V @ 250uA 850 mΩ @ 6A,10V ITO-220AB RoHS
Manufacturer: AnBon
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.9773 ea
Line Total: USD 0.98

3 - Global Stock
Ships to you between
Fri. 10 May to Wed. 15 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
3 - Global Stock


Ships to you between
Fri. 10 May to Wed. 15 May

MOQ : 1
Multiples : 1

Stock Image

AF12N65S
AnBon

1 : USD 0.8976
10 : USD 0.7339
50 : USD 0.653
100 : USD 0.5721
500 : USD 0.5071
1000 : USD 0.4814

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation Max
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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Additional Infomation About Product

The AF12N65S is a MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) manufactured by AnBon and offered in TO-220AB package. It is a N Trench MOSFET with a breakdown voltage of 650V, current rating of 12A, and gate threshold voltage of 4V at 250uA. The device exhibits a very low resistance of 850 mO at maximum current rating of 6A and 10V. It also complies with the RoHS (Restriction of Hazardous Substances) directive.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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