X-On Electronics has gained recognition as a prominent supplier of 2N3417 bipolar transistors - bjt across the USA, India, Europe, Australia, and various other global locations. 2N3417 bipolar transistors - bjt are a product manufactured by Central Semiconductor. We provide cost-effective solutions for bipolar transistors - bjt, ensuring timely deliveries around the world.

2N3417 Central Semiconductor

2N3417 electronic component of Central Semiconductor
Images are for reference only
See Product Specifications
Part No.2N3417
Manufacturer: Central Semiconductor
Category:Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT NPN 50V 500mA BULK HFE/540
Datasheet: 2N3417 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.0773 ea
Line Total: USD 0.08

Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 14 Jun to Thu. 20 Jun

MOQ : 1
Multiples : 1
1 : USD 0.0773
5 : USD 0.0765
50 : USD 0.0647
1000 : USD 0.0465
5000 : USD 0.041
10000 : USD 0.0386

0 - WHS 2


Ships to you between Fri. 14 Jun to Thu. 20 Jun

MOQ : 2500
Multiples : 2500
2500 : USD 0.4582

0 - WHS 3


Ships to you between Thu. 20 Jun to Mon. 24 Jun

MOQ : 1
Multiples : 1
1 : USD 0.8752
10 : USD 0.7222
100 : USD 0.5784
500 : USD 0.4968
1000 : USD 0.4335
2500 : USD 0.3979
5000 : USD 0.3887
10000 : USD 0.3795
25000 : USD 0.3691

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
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We are delighted to provide the 2N3417 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N3417 and other electronic components in the Bipolar Transistors - BJT category and beyond.

2N3414 MPS3414 2N3415 MPS3415 2N3416 MPS3416 www.centralsemi.com 2N3417 MPS3417 DESCRIPTION: SILICON The CENTRAL SEMICONDUCTOR 2N3414, MPS3414 NPN TRANSISTORS series devices are silicon NPN transistors, manufactured by the epitaxial planar process, designed for general purpose and switching applications. MARKING: FULL PART NUMBER TO-92 CASE 2N3414 2N3416 2N3415 2N3417 MAXIMUM RATINGS: (T =25C unless otherwise noted) MPS3414 MPS3416 A SYMBOL MPS3415 MPS3417 UNITS Collector-Base Voltage V 25 50 V CBO Collector-Emitter Voltage V 25 50 V CEO Emitter-Base Voltage V 5.0 V EBO Continuous Collector Current I 500 mA C Power Dissipation P 625 mW D Power Dissipation (T=25C) P 1.5 W C D Operating and Storage Junction Temperature T , T -65 to +150 C J stg ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS I V =Rated V 100 nA CBO CB CBO I V=5.0V 100 nA EBO EB BV I =10mA (3414, 3415) 25 V CEO C BV I =10mA (3416, 3417) 50 V CEO C V I =50mA, I=3.0mA 0.3 V CE(SAT) C B V I =50mA, I=3.0mA 0.85 V BE(SAT) C B h V =4.5V, I =2.0mA (3414, 3416) 75 225 FE CE C h V =4.5V, I =2.0mA (3415, 3417) 180 540 FE CE C h V =4.5V, I =2.0mA, f=1.0kHz (3414, 3416) 75 fe CE C h V =4.5V, I =2.0mA, f=1.0kHz (3415, 3417) 180 fe CE C R3 (10-September 2013)2N3414 MPS3414 2N3415 MPS3415 2N3416 MPS3416 2N3417 MPS3417 SILICON NPN TRANSISTORS TO-92 CASE - MECHANICAL OUTLINE 2N3414 THRU 2N3417 LEAD CODE: 1) Emitter 2) Collector 3) Base MPS3414 THRU MPS3417 LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R3 (10-September 2013) www.centralsemi.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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CENTRAL SEMICONDUCTOR
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Central Semiconductor Corp.

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