CBRDFSH1-100 TR13 Central Semiconductor

CBRDFSH1-40 CBRDFSH1-60 CBRDFSH1-100 www.centralsemi.com SURFACE MOUNT DESCRIPTION: 1.0 AMP SILICON The CENTRAL SEMICONDUCTOR CBRDFSH1-40, SCHOTTKY BRIDGE RECTIFIERS CBRDFSH1-60, and CBRDFSH1-100 are 1.0 Amp full wave bridge rectifiers mounted in a durable epoxy surface mount case, utilizing glass passivated chips. MARKING CODES: CBRDFSH1-40: SH1-40 CBRDFSH1-60: SH1-60 CBRDFSH1-100: SH1100 BR DFN CASE MAXIMUM RATINGS: (T =25C unless otherwise noted) CBRDFSH1 A SYMBOL -40 -60 -100 UNITS Peak Repetitive Reverse Voltage V 40 60 100 V RRM DC Blocking Voltage V 40 60 100 V R RMS Reverse Voltage V 28 42 70 V R(RMS) Average Forward Current (T=50C) I 1.0 A A O Peak Forward Surge Current (8.3ms) I 30 A FSM Operating and Storage Junction Temperature T , T -55 to +125 C J stg ELECTRICAL CHARACTERISTICS PER DIODE: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS TYP MAX UNITS I V =40V (CBRDFSH1-40) 10 200 A R R I V =60V (CBRDFSH1-60) 10 200 A R R I V =100V (CBRDFSH1-100) 1.0 200 A R R V I =1.0A (CBRDFSH1-40) 490 500 mV F F V I =1.0A (CBRDFSH1-60) 600 700 mV F F V I =1.0A (CBRDFSH1-100) 800 850 mV F F C V =4.0V, f=1.0MHz 250 pF J R R3 (9-September 2019)CBRDFSH1-40 CBRDFSH1-60 CBRDFSH1-100 SURFACE MOUNT 1.0 AMP SILICON SCHOTTKY BRIDGE RECTIFIERS BR DFN CASE - MECHANICAL OUTLINE DIMENSIONS INCHES MILLIMETERS SYMBOL MIN MAX MIN MAX A 0.238 0.246 6.05 6.25 B 0.183 0.191 4.65 4.85 C 0.036 0.048 0.92 1.22 D 0.053 0.057 1.35 1.45 E 0.037 0.041 0.95 1.05 F 0.098 0.102 2.49 2.59 BR DFN (REV: R0) SUGGESTED MOUNTING PADS (Dimensions in mm) MARKING CODES: CBRDFSH1-40: SH1-40 CBRDFSH1-60: SH1-60 CBRDFSH1-100: SH1100 R3 (9-September 2019) www.centralsemi.com