Product Information

CBRHDSH2-100 TR13

CBRHDSH2-100 TR13 electronic component of Central Semiconductor

Datasheet
Bridge Rectifiers 2A 100V Schottky Bridge Rectifier

Manufacturer: Central Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.3113 ea
Line Total: USD 1.31

57471 - Global Stock
Ships to you between
Fri. 10 May to Tue. 14 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
33723 - Warehouse 1


Ships to you between Fri. 10 May to Tue. 14 May

MOQ : 1
Multiples : 1

Stock Image

CBRHDSH2-100 TR13
Central Semiconductor

1 : USD 0.9327
10 : USD 0.7716
100 : USD 0.6187
500 : USD 0.5301
1000 : USD 0.4508
3000 : USD 0.4244
6000 : USD 0.4186
9000 : USD 0.414

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Type
Mounting Style
Package / Case
Termination Style
If - Forward Current
Peak Reverse Voltage
Vf - Forward Voltage
Max Surge Current
Minimum Operating Temperature
Maximum Operating Temperature
Length
Width
Height
Series
Packaging
Ir - Reverse Current
Configuration
Product
Brand
Factory Pack Quantity :
Technology
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Vr - Reverse Voltage
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CBRHDSH2-100 SURFACE MOUNT www.centralsemi.com HIGH DENSITY DESCRIPTION: 2 AMP SILICON The CENTRAL SEMICONDUCTOR CBRHDSH2-100 is SCHOTTKY BRIDGE RECTIFIER a full wave bridge rectifier mounted in a durable epoxy surface mount case, utilizing glass passivated chips. MARKING CODE: CSH10 FEATURES: Low Leakage Current (700nA TYP V ) RRM High 2.0A Current Rating HD DIP CASE Low V Schottky Diodes (840mV MAX I =2.0A) F F Device is Halogen Free by design MAXIMUM RATINGS: (T =25C unless otherwise noted) SYMBOL UNITS A Peak Repetitive Reverse Voltage V 100 V RRM DC Blocking Voltage V 100 V R RMS Reverse Voltage V 70 V R(RMS) Average Forward Current (T=75C) I 2.0 A A O Peak Forward Surge Current (8.3ms) I 50 A FSM Operating Junction Temperature T -50 to +125 C J Storage Temperature T -50 to +150 C stg ELECTRICAL CHARACTERISTICS PER DIODE: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS TYP MAX UNITS I V=100V 0.70 4.0 A R R V I =500mA 610 mV F F V I =1.0A 700 mV F F V I =2.0A 770 840 mV F F C V =4.0V, f=1.0MHz 250 pF J R R3 (4-January 2010)CBRHDSH2-100 SURFACE MOUNT HIGH DENSITY 2 AMP SILICON SCHOTTKY BRIDGE RECTIFIER HD DIP CASE - MECHANICAL OUTLINE MARKING CODE: CSH10 R3 (4-January 2010) www.centralsemi.com

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Central
Central Semi
CENTRAL SEMICONDUCTOR
Central Semiconductor Corp
Central Semiconductor Corp.

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