Product Information

CMSSH-3SE TR

CMSSH-3SE TR electronic component of Central Semiconductor

Datasheet
Schottky Diodes & Rectifiers Dual Enh Schottky 40Vrrm 750Ifsm 250mW

Manufacturer: Central Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.7292 ea
Line Total: USD 0.73

1158 - Global Stock
Ships to you between
Wed. 15 May to Fri. 17 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
168 - WHS 1


Ships to you between Wed. 15 May to Fri. 17 May

MOQ : 1
Multiples : 1

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CMSSH-3SE TR
Central Semiconductor

1 : USD 0.5152
10 : USD 0.4404
100 : USD 0.3105
500 : USD 0.2484
1000 : USD 0.2082
3000 : USD 0.1806
9000 : USD 0.1794
24000 : USD 0.176

     
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RoHS - XON
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CMSSH-3E CMSSH-3CE CMSSH-3AE CMSSH-3SE www.centralsemi.com ENHANCED SPECIFICATION DESCRIPTION: SURFACE MOUNT SILICON The CENTRAL SEMICONDUCTOR CMSSH-3E series SCHOTTKY DIODES devices are enhanced versions of the CMSSH-3 series of silicon Schottky diodes in an SOT-323 surface mount package. FEATURED ENHANCED SPECIFICATIONS: I from 100mA MAX to 200mA MAX F BV from 30V MIN to 40V MIN R V from 1.0V MAX to 0.8V MAX F SOT-323 CASE CMSSH-3E: SINGLE MARKING CODE: 31E CMSSH-3AE: DUAL, COMMON ANODE MARKING CODE: 3AE CMSSH-3CE: DUAL, COMMON CATHODE MARKING CODE: 3CE CMSSH-3SE: DUAL, IN SERIES MARKING CODE: 3SE MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Peak Repetitive Reverse Voltage V 40 V RRM Continuous Forward Current I 200 mA F Peak Repetitive Forward Current I 350 mA FRM Peak Forward Surge Current, tp=10ms I 750 mA FSM Power Dissipation P 250 mW D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 500 C/W JA ELECTRICAL CHARACTERISTICS PER DIODE: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN TYP MAX UNITS I V=25V 90 500 nA R R I V =25V, T=100C 25 100 A R R A BV I=100A 40 50 V R R V I=2.0mA 0.29 0.33 V F F V I=15mA 0.37 0.42 V F F V I=100mA 0.51 0.80 V F F V I=200mA 0.65 1.0 V F F C V =1.0V, f=1.0MHz 7.0 pF J R t I =I =10mA, I =1.0mA, R=100 5.0 ns rr F R rr L Enhanced specification. Additional Enhanced specification. R3 (16-February 2016) CMSSH-3E CMSSH-3CE CMSSH-3AE CMSSH-3SE ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODES SOT-323 CASE - MECHANICAL OUTLINE 21 3 PIN CONFIGURATIONS CMSSH-3E CMSSH-3AE CMSSH-3CE CMSSH-3SE LEAD CODE: LEAD CODE: LEAD CODE: LEAD CODE: 1) Anode D2 1) Anode 1) Cathode D2 1) Anode D2 2) NC 2) Cathode D1 2) Anode D1 2) Cathode D1 3) Anode D1, Cathode D2 3) Cathode 3) Anode D1, D2 3) Cathode D1, D2 MARKING CODE: 31E MARKING CODE: 3AE MARKING CODE: 3CE MARKING CODE: 3SE R3 (16-February 2016) www.centralsemi.com

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Central
Central Semi
CENTRAL SEMICONDUCTOR
Central Semiconductor Corp
Central Semiconductor Corp.

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