CMXSH-3 www.centralsemi.com SURFACE MOUNT TRIPLE ISOLATED DESCRIPTION: SILICON SCHOTTKY DIODES The CENTRAL SEMICONDUCTOR CMXSH-3 type contains three (3) Isolated Schottky Silicon Switching Diodes, manufactured by the epitaxial planar process, epoxy molded in a SUPERmini surface mount package, and designed for applications requiring low forward voltage drop. MARKING CODE: XH3 SOT-26 CASE MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Peak Repetitive Reverse Voltage V 30 V RRM Continuous Forward Current I 100 mA F Peak Repetitive Forward Current I 350 mA FRM Peak Forward Surge Current, tp=10ms I 750 mA FSM Power Dissipation P 350 mW D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 357 C/W JA ELECTRICAL CHARACTERISTICS PER DIODE: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN TYP MAX UNITS I V=25V 90 500 nA R R I V =25V, T=100C 25 100 A R R A BV I=100A 30 V R R V I=2.0mA 0.29 0.33 V F F V I=15mA 0.40 0.45 V F F V I=100mA 0.74 1.00 V F F C V =1.0V, f=1.0MHz 7.0 pF T R t I =I =10mA, I =1.0mA, R=100 5.0 ns rr F R rr L R5 (12-February 2010)CMXSH-3 SURFACE MOUNT TRIPLE ISOLATED SILICON SCHOTTKY DIODES SOT-26 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Anode D1 2) Anode D2 3) Anode D3 4) Cathode D3 5) Cathode D2 6) Cathode D1 MARKING CODE: XH3 R5 (12-February 2010) www.centralsemi.com